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MOSFETs from Manufacturers in Japan - Page 52

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 52 of 161
SSM3J117TU Image
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Toshiba - SSM3J117TU

MOSFET from Toshiba
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
80 to 225 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Package:
UFM
Applications:
DC-DC converter Applications, High-Speed Switching...
more info
RJK5033DPP-M0 Image
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Renesas - RJK5033DPP-M0

MOSFET from Renesas
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
960 to 1300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
27.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FL
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
RD3U041AAFRA Image
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ROHM Semiconductor - RD3U041AAFRA

MOSFET from ROHM Semiconductor
250 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
930 to 1300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
29 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
SSM6N35FE Image
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Toshiba - SSM6N35FE

MOSFET from Toshiba
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.18 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1500 to 20000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-563
Applications:
High-Speed Switching Applications, Analog Switchin...
more info
RJF0614JSP Image
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Renesas - RJF0614JSP

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
201 to 297 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Automotive
Applications:
Power Switching
more info
R8002CND3FRA Image
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ROHM Semiconductor - R8002CND3FRA

MOSFET from ROHM Semiconductor
800 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
330 to 4300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
69 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
TK9P65W Image
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Toshiba - TK9P65W

MOSFET from Toshiba
650 V, 20 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
460 to 560 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
RJK2017DPP-M0 Image
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Renesas - RJK2017DPP-M0

MOSFET from Renesas
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
36 to 47 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FL
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
SP8K22HZG Image
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ROHM Semiconductor - SP8K22HZG

MOSFET from ROHM Semiconductor
45 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
33 to 64 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
SSM3J15FS Image
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Toshiba - SSM3J15FS

MOSFET from Toshiba
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 32000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.1 W
Package:
SSM
Applications:
High Speed Switching Applications, Analog Switch A...
more info
RJK0852DPB Image
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Renesas - RJK0852DPB

MOSFET from Renesas
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
9 to 14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Switching Mode Power Supply
more info
R8001CND3FRA Image
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ROHM Semiconductor - R8001CND3FRA

MOSFET from ROHM Semiconductor
800 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1 to 1 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
6700 to 8700 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
36 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching
more info
SSM6J401TU Image
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Toshiba - SSM6J401TU

MOSFET from Toshiba
-30 V, 16 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
53 to 145 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
DC-DC converter Applications, High-Speed Switching...
more info
RJF0612JPE Image
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Renesas - RJF0612JPE

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.9 to 10 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)-(1)
Industry:
Automotive
Applications:
Power Switching
more info
SP8K32HZG Image
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ROHM Semiconductor - SP8K32HZG

MOSFET from ROHM Semiconductor
60 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
46 to 77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
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