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MOSFETs - Page 219

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 219 of 1280
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First Silicon - FTK4812

MOSFET from First Silicon
30 V, 6.9 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
22.0 to 42 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.44 to 2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
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Cystech Electronics - MTE3D6N10RE3-0-UB-G

MOSFET from Cystech Electronics
100 V, 16 to 108 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 108 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4 to 5.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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PFC Device - PRM9R2N15CTF

MOSFET from PFC Device
150 V, 35 to 54 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 to 54 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
8.2 to 9.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220AB
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QM2409K

MOSFET from uPI Semiconductor
-20 V, -2.8 to -3.5 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.8 to -3.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
60 to 105 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.32 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INK0002AC1

MOSFET from Isahaya Electronics
30 V, 200 mA, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 mA
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.1 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
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Oriental Semiconductor - OSG65R380FEF_NB

MOSFET from Oriental Semiconductor
650 V, 7 to 11 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 11 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
300 to 770 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F_NL
Industry:
Industrial, Commercial
Applications:
Charger, Adapter, TV power, Telecom power, Server ...
more info
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Galaxy Century Microelectronics - 2N7172DW

MOSFET from Galaxy Century Microelectronics
±20 V, -0.2 to 0.3 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.2 to 0.3 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
1000 to 5000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
more info
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Toshiba - MG600Q2YMS3

MOSFET from Toshiba
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
600 A
Drain Source Breakdown Voltage:
1200 V
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
2000 W
Package:
PMI153A
Applications:
High-Power Switching, Motor Controllers (including...
more info
UPA2660T1R Image
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Renesas - UPA2660T1R

MOSFET from Renesas
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
33 to 62 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
HUSON
Industry:
Commercial, Industrial
more info
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ROHM Semiconductor - RD3L04BBJHRBTL

MOSFET from ROHM Semiconductor
-60 V, -48 to 48 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-48 to 48 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
23 to 34 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
6.43 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
BUP06CN015E-01 Image
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Infineon Technologies - BUP06CN015E-01

MOSFET from Infineon Technologies
Automotive Grade N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
87 to 106 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9.5 to 20 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
390 W
Temperature operating range:
-40 to 125 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Power conditioning unit, Power distribution unit, ...
more info
SiRA88BDP-T1-GE3 Image
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Vishay - SiRA88BDP-T1-GE3

MOSFET from Vishay
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.5 to 10.5 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
17 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
High power density DC/DC, Synchronous rectificatio...
more info
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onsemi - NVTFS6H854NLTAG

MOSFET from onsemi
-20 to 20 V, 8 to 17 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
11.1 to 17.3 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Switching power supplies, Power switches (High Sid...
more info
STW9N80K5 Image
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STMicroelectronics - STW9N80K5

MOSFET from STMicroelectronics
-30 to 30 V, 12 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
730 to 900 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
IXTH16P60P Image
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Littelfuse - IXTH16P60P

MOSFET from Littelfuse
-600 V, 92 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-16 A
Drain Source Breakdown Voltage:
-600 V
Drain Source Resistance:
720 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
460 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
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