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MOSFETs from Manufacturers in Japan - Page 44

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 44 of 161
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Panasonic Corporation - FCAB21500L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.7 to 6.7 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.45 W
Package:
CSP
more info
SSM6L40TU Image
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Toshiba - SSM6L40TU

MOSFET from Toshiba
-30 to 30 V, 5.1 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Technology:
Silicon
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.4 to 1.6 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
96 to 403 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Package:
SOT-363
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Power Management Switch Applications, High-Speed S...
more info
RJK0853DPB Image
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Renesas - RJK0853DPB

MOSFET from Renesas
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.2 to 9.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Switching Mode Power Supply
more info
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ROHM Semiconductor - RJ1R04BBHTL1

MOSFET from ROHM Semiconductor
150 V, -40 to 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
21 to 33 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263AB
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
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Panasonic Corporation - FCAB21A50L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.55 to 6.10 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.54 to 3.5 W
Package:
CSP
more info
SSM6N44FE Image
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Toshiba - SSM6N44FE

MOSFET from Toshiba
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2200 to 7000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-363
Industry:
Commercial, Industrial
Applications:
High-Speed Switching Applications, Analog Switchin...
more info
RJF0618JPE Image
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Renesas - RJF0618JPE

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12 to 25 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)-(1)
Industry:
Automotive
Applications:
Power Switching
more info
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ROHM Semiconductor - RD3L03BBJHRBTL

MOSFET from ROHM Semiconductor
-60 V, -29 to 29 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-29 to 29 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
43 to 62 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
53 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial, Automotive
more info
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Panasonic Corporation - FCAB21890L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.3 to 5.8 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.54 to 3.5 W
Package:
CSP
more info
TW070J120B Image
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Toshiba - TW070J120B

MOSFET from Toshiba
1200 V, 67 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
70 to 90 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
272 W
Package:
TO-3P
Industry:
Industrial, Military, Automotive
Applications:
Switching Voltage Regulators
more info
RJK0328DPB-01 Image
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Renesas - RJK0328DPB-01

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.6 to 2.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - AG194FPD3HRBTL

MOSFET from ROHM Semiconductor
100 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.8 to 8.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
142 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
Applications:
Automotive Systems
more info
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Panasonic Corporation - FCAB21860L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1 to 4.50 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.58 to 3.20 W
Package:
CSP
more info
TK35S04K3L Image
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Toshiba - TK35S04K3L

MOSFET from Toshiba
40 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
8.2 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
58 W
Package:
DPAK
Industry:
Commercial, Industrial, Automotive
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RJF0622JSP Image
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Renesas - RJF0622JSP

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
139 to 180 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Automotive
Applications:
Power Switching
more info
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