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MOSFETs from Manufacturers in Japan - Page 48

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 48 of 161
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Panasonic Corporation - FC4B21210L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
8 to 31.5 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.37 to 1.8 W
Package:
CSP
more info
TJ90S04M3L Image
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Toshiba - TJ90S04M3L

MOSFET from Toshiba
-40 V, 172 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
3.4 to 6 milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
180 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RJK6006DPP-A0 Image
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Renesas - RJK6006DPP-A0

MOSFET from Renesas
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1400 to 1600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
29 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FPA
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
SP8M24HZG Image
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ROHM Semiconductor - SP8M24HZG

MOSFET from ROHM Semiconductor
-45 to 45 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-45 to 45 V
Drain Source Resistance:
33 to 92 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
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Panasonic Corporation - FCAB21350L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.55 to 6.1 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.45 to 2.1 W
Package:
CSP
more info
SSM6N44FU Image
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Toshiba - SSM6N44FU

MOSFET from Toshiba
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2200 to 7000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Package:
SOT-363
Industry:
Commercial, Industrial, Automotive
Applications:
High-Speed Switching Applications, Analog Switchin...
more info
RJF0610DSP Image
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Renesas - RJF0610DSP

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
153 to 285 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
SP8M31HZG Image
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ROHM Semiconductor - SP8M31HZG

MOSFET from ROHM Semiconductor
-60 to 60 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
46 to 85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
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Panasonic Corporation - FC6B21150L

MOSFET from Panasonic Corporation
10.5 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
3 to 10 milliohm
Gate Source Voltage:
10.5 V
Power Dissipation:
0.45 to 2.1 W
Package:
CSP
more info
TK200F04N1L Image
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Toshiba - TK200F04N1L

MOSFET from Toshiba
40 V, 214 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.78 to 1.37 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
375 W
Package:
TO-220SM
Industry:
Commercial, Industrial, Automotive
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RJF0611DPE Image
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Renesas - RJF0611DPE

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 40 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)(1)
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
SP8K52HZG Image
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ROHM Semiconductor - SP8K52HZG

MOSFET from ROHM Semiconductor
100 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
120 to 190 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching, Motor Drive
more info
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Panasonic Corporation - FCAB22370L

MOSFET from Panasonic Corporation
12 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
2.1 to 9 milliohm
Gate Source Voltage:
12 V
Power Dissipation:
0.45 W
Package:
CSP
more info
TK33S10N1Z Image
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Toshiba - TK33S10N1Z

MOSFET from Toshiba
100 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8.2 to 9.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Package:
DPAK
Industry:
Commercial, Industrial, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
RQK2001HQDQA Image
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Renesas - RQK2001HQDQA

MOSFET from Renesas
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
5000 to 6700 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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