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MOSFETs from Manufacturers in Japan - Page 47

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 47 of 161
TK15S04N1L Image
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Toshiba - TK15S04N1L

MOSFET from Toshiba
40 V, 10 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
13.7 to 37 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46 W
Package:
DPAK
Industry:
Commercial, Industrial, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
RJK0703DPN-A0 Image
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Renesas - RJK0703DPN-A0

MOSFET from Renesas
75 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
5.3 to 6.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220ABA
Industry:
Commercial, Industrial
more info
RA1C030LDT5CL Image
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ROHM Semiconductor - RA1C030LDT5CL

MOSFET from ROHM Semiconductor
20 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
140 milli-ohm
Gate Source Voltage:
7 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Applications:
Switching circuits, Single-Cell Battery Applicatio...
more info
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Panasonic Corporation - FC4B22180L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
7 to 22.6 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.4 to 1.5 W
Package:
CSP
more info
SSM6N36TU Image
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Toshiba - SSM6N36TU

MOSFET from Toshiba
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-363
Industry:
Commercial, Industrial
Applications:
High-Speed Switching Applications
more info
RJK0354DSP Image
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Renesas - RJK0354DSP

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.4 to 10.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
QS6K21FRA Image
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ROHM Semiconductor - QS6K21FRA

MOSFET from ROHM Semiconductor
45 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-1 to 1 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
300 to 585 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Automotive
Applications:
Switching
more info
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Panasonic Corporation - FCAB21830L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.6 to 8.5 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.51 to 3.2 W
Package:
CSP
more info
TJ8S06M3L Image
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Toshiba - TJ8S06M3L

MOSFET from Toshiba
-60 V, 19 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
80 to 130 milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
27 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RQK0604IGDQA Image
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Renesas - RQK0604IGDQA

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
111 to 180 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
SP8M41HZG Image
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ROHM Semiconductor - SP8M41HZG

MOSFET from ROHM Semiconductor
-80 to 80 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.4 to 3.4 A
Drain Source Breakdown Voltage:
-80 to 80 V
Drain Source Resistance:
90 to 310 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
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Panasonic Corporation - FCAB21260L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.5 to 6.1 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.45 to 2.1 W
Package:
CSP
more info
TK100S04N1L Image
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Toshiba - TK100S04N1L

MOSFET from Toshiba
40 V, 76 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.9 to 4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
180 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RQK0302GGDQS Image
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Renesas - RQK0302GGDQS

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
81 to 150 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
SP8M51HZG Image
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ROHM Semiconductor - SP8M51HZG

MOSFET from ROHM Semiconductor
-100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
120 to 340 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
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