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MOSFETs from Manufacturers in Japan - Page 45

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 45 of 161
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ROHM Semiconductor - RS6G122CHTB1

MOSFET from ROHM Semiconductor
40 V, -225 to 225 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-225 to 225 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.03 to 2.42 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.6 to 125 W
Temperature operating range:
-55 to 175 Degree C
Package:
HSOP8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
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Panasonic Corporation - FCAB22510L

MOSFET from Panasonic Corporation
12 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
3.3 to 14 milliohm
Gate Source Voltage:
12 V
Power Dissipation:
0.51 to 3.1 W
Package:
CSP
more info
TPHR7904PB Image
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Toshiba - TPHR7904PB

MOSFET from Toshiba
40 V, 85 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.65 to 1.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
RJK0330DPB-01 Image
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Renesas - RJK0330DPB-01

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.1 to 3.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - RX3N07BBHC16

MOSFET from ROHM Semiconductor
80 V, -100 to 100 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-100 to 100 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.2 to 7.1 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
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Panasonic Corporation - FCAB21520L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.1 to 4.5 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.54 to 3.8 W
Package:
CSP
more info
XPH3R206NC Image
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Toshiba - XPH3R206NC

MOSFET from Toshiba
60 V, 65 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.6 to 6.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
132 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
RJK4002DPD Image
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Renesas - RJK4002DPD

MOSFET from Renesas
400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
2400 to 2900 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
MP-3A
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
R6004END4TL1 Image
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ROHM Semiconductor - R6004END4TL1

MOSFET from ROHM Semiconductor
600 V Low-Radiation Noise N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
980 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
9.1 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
Switching applications
more info
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Panasonic Corporation - FC6B21810L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
2.9 to 13.8 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.5 to 2.6 W
Package:
CSP
more info
SSM6N36FE Image
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Toshiba - SSM6N36FE

MOSFET from Toshiba
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-563
Industry:
Commercial, Industrial
Applications:
High-Speed Switching Applications
more info
RJK03M2DPA Image
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Renesas - RJK03M2DPA

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.3 to 3.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
HP8ME5TB1 Image
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ROHM Semiconductor - HP8ME5TB1

MOSFET from ROHM Semiconductor
100 V N/P-Channel MOSFET for Switching Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Continous Drain Current:
-8.5 to 8.5 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
303 milli-ohm
Power Dissipation:
20 W
Applications:
Switching and Motor Drive Applications
more info
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Panasonic Corporation - FC4B21320L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
27 to 115 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.34 to 0.90 W
Package:
CSP
more info
TK1R4F04PB Image
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Toshiba - TK1R4F04PB

MOSFET from Toshiba
40 V, 103 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
160 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.1 to 1.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
205 W
Package:
TO-220SM
Industry:
Commercial, Industrial, Automotive
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
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