1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 46

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 46 of 161
Download Datasheet  Request Quote  Product Details

Renesas - 2SJ624

MOSFET from Renesas
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
43 to 108 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TMM
Industry:
Commercial, Industrial
more info
HP8KE6TB1 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - HP8KE6TB1

MOSFET from ROHM Semiconductor
100 V Dual N-Channel Power MOSFET for Switching Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
41 to 73 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 to 21 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSOP8
Industry:
Commercial, Industrial
Applications:
Ideal for switching applications
more info
Download Datasheet  Request Quote  Product Details

Panasonic Corporation - FC6B22500L

MOSFET from Panasonic Corporation
12 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
5.2 to 21.8 milliohm
Gate Source Voltage:
12 V
Power Dissipation:
0.44 to 2.4 W
Package:
CSP
more info
TPW1R104PB Image
Download Datasheet  Request Quote  Product Details

Toshiba - TPW1R104PB

MOSFET from Toshiba
40 V, 55 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.96 to 1.96 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
132 W
Package:
DSOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
UPA1803GR Image
Download Datasheet  Request Quote  Product Details

Renesas - UPA1803GR

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.6 to 16 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSSOP
Industry:
Commercial, Industrial
more info
R6004RND3 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6004RND3

MOSFET from ROHM Semiconductor
600 V Power MOSFET for Switching Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1.33 ohm
Gate Source Voltage:
30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Applications:
Switching Applications
more info
Download Datasheet  Request Quote  Product Details

Panasonic Corporation - FC6B22160L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
3.5 to 11.8 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.45 to 2.1 W
Package:
CSP
more info
TK1R5R04PB Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK1R5R04PB

MOSFET from Toshiba
40 V, 103 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
160 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.25 to 2.05 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
205 W
Package:
DPAK
Industry:
Commercial, Industrial, Automotive
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RJK0603DPN-A0 Image
Download Datasheet  Request Quote  Product Details

Renesas - RJK0603DPN-A0

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.1 to 5.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220ABA
Industry:
Commercial, Industrial
more info
RH6G040BGTB1 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RH6G040BGTB1

MOSFET from ROHM Semiconductor
40 V N-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Applications:
Switching
more info
Download Datasheet  Request Quote  Product Details

Panasonic Corporation - FCAB21770L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.3 to 5.3 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.54 to 3.2 W
Package:
CSP
more info
SSM6N43FU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM6N43FU

MOSFET from Toshiba
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-363
Industry:
Commercial, Industrial
Applications:
High-Speed Switching Applications
more info
RJK5033DPD Image
Download Datasheet  Request Quote  Product Details

Renesas - RJK5033DPD

MOSFET from Renesas
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
960 to 1300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
MP-3A
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
RS6G100BGTB1 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RS6G100BGTB1

MOSFET from ROHM Semiconductor
40 V N-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSOP8
Applications:
Switching
more info
Download Datasheet  Request Quote  Product Details

Panasonic Corporation - FC4B21300L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
55 to 225 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.32 to 0.60 W
Package:
CSP
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.