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MOSFETs from Manufacturers in Japan - Page 43

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 43 of 161
TPWR7904PB Image
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Toshiba - TPWR7904PB

MOSFET from Toshiba
40 V, 85 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.65 to 1.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
DSOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
RJF0611JPE Image
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Renesas - RJF0611JPE

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 40 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)-(1)
Industry:
Automotive
Applications:
Power Switching
more info
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ROHM Semiconductor - RD3N07BBHTL1

MOSFET from ROHM Semiconductor
80 V, -105 to 105 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-105 to 105 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
3.7 to 6.3 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
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Panasonic Corporation - FC6B21100L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
3.4 to 11 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.45 W
Package:
CSP
more info
TK33S10N1L Image
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Toshiba - TK33S10N1L

MOSFET from Toshiba
100 V, 33 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8.2 to 16.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Package:
DPAK
Industry:
Commercial, Industrial, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
RQK0201QGDQA Image
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Renesas - RQK0201QGDQA

MOSFET from Renesas
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
30 to 53 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - RH7G04CBJFRATCB

MOSFET from ROHM Semiconductor
-40 V, -40 to 40 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
13.8 to 22.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN3333T8LSAB
Industry:
Industrial, Commercial, Automotive
more info
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Panasonic Corporation - FC4B21080L

MOSFET from Panasonic Corporation
12 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
18 to 100 milliohm
Gate Source Voltage:
12 V
Power Dissipation:
0.35 W
Package:
CSP
more info
SSM6L820R Image
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Toshiba - SSM6L820R

MOSFET from Toshiba
-20 to 30 V, 6.7 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Technology:
Silicon
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
-20 to 30 V
Drain Source Resistance:
30 to 157 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.8 W
Package:
TSOP6F
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Power Management Switches
more info
RJK0654DPB Image
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Renesas - RJK0654DPB

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6.5 to 83 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - RD3L04BBLHRBTL

MOSFET from ROHM Semiconductor
60 V, -40 to 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
10.5 to 19.1 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
53 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial, Automotive
more info
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Panasonic Corporation - FC4B21280L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
12 to 45 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.36 to 1.8 W
Package:
CSP
more info
SSM6N61NU Image
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Toshiba - SSM6N61NU

MOSFET from Toshiba
20 V, 3.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
25 to 108 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Package:
UDFN6
Industry:
Commercial, Industrial, Automotive
Applications:
Power Management Switches, DC-DC Converters
more info
RJK1052DPB Image
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Renesas - RJK1052DPB

MOSFET from Renesas
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
15 to 22 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Switching Mode Power Supply
more info
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ROHM Semiconductor - RD3L08CBLHRBTL

MOSFET from ROHM Semiconductor
60 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.1 to 7.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
96 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
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