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GaN Power Transistors - Page 17

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 17 of 34
INN150EQ070A Image
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Innoscience - INN150EQ070A

GaN Power Transistor from Innoscience
150 V, 5.4 to 7 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
5.4 to 7 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
160 A
Total Charge:
13 nC
Input Capacitance:
1450 pF
Output Capacitance:
525 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
En-FCQFN
Applications:
High frequency DC-DC converter, Solar Systems opti...
Dimensions:
4 x 6 mm
more info
NV6127 Image
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Navitas Semiconductor - NV6127

GaN Power Transistor from Navitas Semiconductor
650 V GaN Power Transistor for Solar Micro-Inverter Applications

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
125 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
24 A
Total Charge:
27 nC
Output Capacitance:
27 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
TDG100E90TEPF Image
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Teledyne e2v HiRel Electronics - TDG100E90TEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
100 V Enhancement Mode GaN-on-Si Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
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Solid State Devices - SGF30E100Z8DB

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254Z
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGCTO65R110A

GaN Power Transistor from Xindao Electronic Technology
650 V, 110 to 230 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
110 to 230 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
75 A
Total Charge:
7.2 nC
Input Capacitance:
243 pF
Output Capacitance:
34 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
7 ns
Rise Time:
17 ns
Fall Time:
15 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
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GaNPower International - GPIHV10DK

GaN Power Transistor from GaNPower International
1200 V, 87 to 162 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
1200 V
Drain Source Resistance:
87 to 162 milli-ohm
Continous Drain Current:
7 A
Total Charge:
3.5 nC
Input Capacitance:
105 pF
Output Capacitance:
32 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
16 ns
Rise Time:
12 ns
Fall Time:
12 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO252
Applications:
Switching Power Applications, Server and Telecom P...
more info
IGLR70R140D2S Image
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Infineon Technologies - IGLR70R140D2S

GaN Power Transistor from Infineon Technologies
700 V, 13 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
700 V
Drain Source Resistance:
0.140 to 0.300 Ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
-23 to 23 A
Total Charge:
14 nC
Input Capacitance:
133 pF
Output Capacitance:
22 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
10 ns
Rise Time:
7 ns
Fall Time:
23 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Consumer applications like charger, adapter, TV po...
more info
GAN039-650NBBA Image
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Nexperia - GAN039-650NBBA

GaN Power Transistor from Nexperia
AEC-Q100 Qualified GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
4 V
Drain Source Voltage:
650 V
Drain Source Resistance:
33 milli-ohm
Continous Drain Current:
60 A
Total Charge:
30 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Temperature operating range:
-55 to +175 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CCPAK
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
12 x 12 x 2.5 mm
more info
EPC7020 Image
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Efficient Power Conversion - EPC7020

GaN Power Transistor from Efficient Power Conversion
200 V Radiation Hard Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
11 milli-ohm
Continous Drain Current:
39 A
Pulsed Drain Current:
170 A
Total Charge:
11.7 nC
Input Capacitance:
1137 pF
Output Capacitance:
494 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space applications: DC-DC power, motor drives, lid...
Dimensions:
4.6 x 2.6 mm
more info
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EPC Space - JANSH2N7684UFGC

GaN Power Transistor from EPC Space
300 V, 32 to 50 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
300 V
Drain Source Resistance:
35 milli-ohm
Continous Drain Current:
32 to 50 A
Total Charge:
20 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
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Innoscience - ISG6107QA

GaN Power Transistor from Innoscience
-7 to 700 V, 150 to 210 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
-7 to 700 V
Drain Source Resistance:
150 to 210 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
16 A
Output Capacitance:
27.6 pF
Turn-on Delay Time:
25 ns
Turn-off Delay Time:
35 ns
Rise Time:
10 ns
Fall Time:
10 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN6x8-30L
Applications:
AC-DC, DC-DC, DC-AC Power Supply, PFC, QR Flyback,...
more info
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Solid State Devices - SGF48N10S1

GaN Power Transistor from Solid State Devices
100 V, 8 to 10 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD1
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGCTOF65R160A

GaN Power Transistor from Xindao Electronic Technology
650 V, 160 to 340 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 340 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
27 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
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GaNPower International - GPI65007DF88

GaN Power Transistor from GaNPower International
650 V, 170 to 420 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
170 to 420 milli-ohm
Continous Drain Current:
7 A
Pulsed Drain Current:
16 A
Total Charge:
2.1 nC
Input Capacitance:
60 pF
Output Capacitance:
16 pF
Turn-on Delay Time:
4 ns
Turn-off Delay Time:
14 ns
Rise Time:
8 ns
Fall Time:
8 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
8 x 8 mm
more info
IGK080B041S Image
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Infineon Technologies - IGK080B041S

GaN Power Transistor from Infineon Technologies
40 V Bidirectional GaN Transistor

Product Specs

Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.9 V
Continous Drain Current:
14 A
Pulsed Drain Current:
70 A
Total Charge:
0.7 to 5.5 nC
Input Capacitance:
387 pF
Output Capacitance:
154 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMT
Applications:
High side load switch, OVP protection in smart pho...
more info
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