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GaN Power Transistors - Page 18

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 18 of 34
GAN063-650WSA Image
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Nexperia - GAN063-650WSA

GaN Power Transistor from Nexperia
650 V GaN Power Transistor for Industrial and Datacom Power

Product Specs

Configuration:
Single
Gate Threshold Voltage:
2.2 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 60 milli-ohm
Continous Drain Current:
24.4 to 34.5 A
Total Charge:
15 nc
Input Capacitance:
1000 pF
Output Capacitance:
130 pF
Turn-on Delay Time:
57 ns
Turn-off Delay Time:
88 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
-55 to +175 °C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
20.45 x 15.6 x 4.95 mm
more info
EPC2307 Image
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Efficient Power Conversion - EPC2307

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement Mode GaN Power Transistor for LiDAR Applications

Product Specs

Configuration:
Single
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
130 A
Total Charge:
10.6 nC
Input Capacitance:
1401 pF
Output Capacitance:
326 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Synchronous Rectification, AC/DC chargers, SMPS, a...
Dimensions:
3 x 5 mm
more info
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EPC Space - EPC7001BC

GaN Power Transistor from EPC Space
40 V, 50 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
10 to 11 milli-ohm
Continous Drain Current:
50 A
Pulsed Drain Current:
120 A
Total Charge:
12 nC
Input Capacitance:
1342 pF
Output Capacitance:
792 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
ISG6108QA Image
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Innoscience - ISG6108QA

GaN Power Transistor from Innoscience
700 V Enhancement Mode GaN Transistor for Solar Micro Inverter Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
700 V
Drain Source Resistance:
230 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
10 A
Output Capacitance:
18.2 pF
Turn-on Delay Time:
25 ns
Turn-off Delay Time:
35 ns
Rise Time:
10 ns
Fall Time:
10 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN6x8-30L
Applications:
AC-DC, DC-DC, DC-AC Power Supply, PFC, QR Flyback,...
Dimensions:
6 x 8 mm
more info
TDG100E90TEP Image
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Teledyne e2v HiRel Electronics - TDG100E90TEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
100 V, 6 to 20 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
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Solid State Devices - SGF46E70S1

GaN Power Transistor from Solid State Devices
700 V, 30 to 72 milli-ohm, 46 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
30 to 72 milli-ohm
Continous Drain Current:
46 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD1
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGH8N65R300A

GaN Power Transistor from Xindao Electronic Technology
650 V, 300 to 600 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.5 to 3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
300 to 600 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
11 A
Total Charge:
1.35 nC
Input Capacitance:
46 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
4.4 ns
Turn-off Delay Time:
4.1 ns
Rise Time:
11.8 ns
Fall Time:
11.2 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060-8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
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GaNPower International - GPI65005DF68

GaN Power Transistor from GaNPower International
650 V, 235 to 580 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
235 to 580 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
11 A
Total Charge:
1.6 nC
Input Capacitance:
39 pF
Output Capacitance:
11.8 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
16 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Server and Telecom P...
Dimensions:
6 x 8 mm
more info
GS-065-030-2-L-MR Image
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Infineon Technologies - GS-065-030-2-L-MR

GaN Power Transistor from Infineon Technologies
650 V Enhancement mode GaN transistor for Solar Inverter Applications

Product Specs

Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Bridgeless totem-pole PFC, Consumer, Industrial, a...
Dimensions:
8 x 8 mm
more info
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EPC Space - JANSH2N7673UFCC

GaN Power Transistor from EPC Space
300 V, 2.3 to 4 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
300 V
Drain Source Resistance:
350 milli-ohm
Continous Drain Current:
2.3 to 4 A
Total Charge:
2.6 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-C
more info
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Innoscience - INN650TA050AH

GaN Power Transistor from Innoscience
650 V, 38 to 87 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
38 to 87 milli-ohm
Continous Drain Current:
40 A
Pulsed Drain Current:
84 A
Total Charge:
12.5 nC
Input Capacitance:
450 pF
Output Capacitance:
208 pF
Turn-on Delay Time:
21 ns
Turn-off Delay Time:
8 ns
Rise Time:
10 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
TDG100E90BSP Image
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Teledyne e2v HiRel Electronics - TDG100E90BSP

GaN Power Transistor from Teledyne e2v HiRel Electronics
100V E-mode GaN transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
100 V
Drain Source Resistance:
17.5 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Applications:
High efficiency power conversion, High density pow...
more info
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Solid State Devices - SGR15E90M

GaN Power Transistor from Solid State Devices
900 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
900 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 to 18 nC
Input Capacitance:
1400 pF
Output Capacitance:
120 pF
Turn-on Delay Time:
70 ns
Turn-off Delay Time:
150 ns
Rise Time:
48 ns
Fall Time:
18 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Infineon Technologies - IGLR65R270D2

GaN Power Transistor from Infineon Technologies
650 V, 0.27 to 0.58 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.27 to 0.58 ohm
Continous Drain Current:
7.2 A
Pulsed Drain Current:
-13 to 13 A
Total Charge:
1.4 nC
Input Capacitance:
70 pF
Output Capacitance:
12 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2252 Image
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Efficient Power Conversion - EPC2252

GaN Power Transistor from Efficient Power Conversion
AEC-Q101 Qualified Enhancement Mode Power Transistor

Product Specs

Configuration:
Single
Industry:
Automotive, Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
80 V
Drain Source Resistance:
8 milli-ohm
Continous Drain Current:
8.2 A
Pulsed Drain Current:
75 A
Total Charge:
3.5 nC
Input Capacitance:
440 pF
Output Capacitance:
190 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive Lidar/TOF, 48 V Servers, Pulsed Power, ...
Dimensions:
1.5 x 1.5 mm
more info
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