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GaN Power Transistors - Page 21

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 21 of 34
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GaNPower International - GPIXU30SB5L

GaN Power Transistor from GaNPower International
1200 V, 52 to 76 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.5 V
Drain Source Voltage:
1200 V
Drain Source Resistance:
52 to 76 milli-ohm
Continous Drain Current:
30 A
Total Charge:
8.25 nC
Input Capacitance:
236 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
26 ns
Rise Time:
35 ns
Fall Time:
78 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO263-5L
Applications:
Switching Power Applications, Server and Telecom P...
more info
IGOT65R025D2 Image
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Infineon Technologies - IGOT65R025D2

GaN Power Transistor from Infineon Technologies
650 V Enhancement Mode GaN Power Transistor for Industrial Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
30 milli-ohm
Continous Drain Current:
61 A
Pulsed Drain Current:
140 A
Total Charge:
16 nC
Input Capacitance:
770 pF
Output Capacitance:
122 pF
Temperature operating range:
-55 to 150 Degree C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
Dimensions:
16.5 x 14.5 x 3.35 mm
more info
EPC2308 Image
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Efficient Power Conversion - EPC2308

GaN Power Transistor from Efficient Power Conversion
150 V N-Channel Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
150 V
Drain Source Resistance:
6 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
157 A
Total Charge:
10.6 nC
Input Capacitance:
1454 pF
Output Capacitance:
405 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
High density DC-DC from 80–100 V, AC/DC, Synchrono...
Dimensions:
3 mm x 5 mm
more info
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EPC Space - JANSH2N7679UFDC

GaN Power Transistor from EPC Space
40 V, 51 to 81 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
40 V
Drain Source Resistance:
5 milli-ohm
Continous Drain Current:
51 to 81 A
Total Charge:
22 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-D
more info
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Innoscience - INN150FQ032A

GaN Power Transistor from Innoscience
150 V, 3.2 to 3.9 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
3.2 to 3.9 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
260 A
Total Charge:
20 nC
Input Capacitance:
2200 pF
Output Capacitance:
900 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Solar Systems opti...
Dimensions:
4 x 6 mm
more info
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GaNPower International - GPI90005DF88

GaN Power Transistor from GaNPower International
900 V, 235 to 580 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
900 V
Drain Source Resistance:
235 to 580 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
11 A
Total Charge:
1.6 nC
Input Capacitance:
39 pF
Output Capacitance:
11.8 pF
Turn-on Delay Time:
40 ns
Turn-off Delay Time:
39 ns
Rise Time:
20 ns
Fall Time:
90 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Server and Telecom P...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGOT65R045D2

GaN Power Transistor from Infineon Technologies
650 V, 0.045 to 0.096 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.045 to 0.096 ohm
Continous Drain Current:
34 A
Pulsed Drain Current:
-76 to 76 A
Total Charge:
8.4 nC
Input Capacitance:
420 pF
Output Capacitance:
67 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2302 Image
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Efficient Power Conversion - EPC2302

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1.8 milli-ohm
Continous Drain Current:
101 A
Pulsed Drain Current:
408 A
Total Charge:
23 nC
Input Capacitance:
3200 pF
Output Capacitance:
1000 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
AC-DC chargers, SMPS, adaptors, power supplies, Hi...
Dimensions:
3 mm x 5 mm
more info
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EPC Space - JANSH2N7678UFGC

GaN Power Transistor from EPC Space
40 V, 57 to 90 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
40 V
Drain Source Resistance:
4 milli-ohm
Continous Drain Current:
57 to 90 A
Total Charge:
22 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
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Innoscience - INN040FQ043A

GaN Power Transistor from Innoscience
40 V, 3 to 4.3 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3 to 4.3 milli-ohm
Continous Drain Current:
24 A
Pulsed Drain Current:
160 A
Total Charge:
6.2 to 8.5 nC
Input Capacitance:
805 pF
Output Capacitance:
428 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
4 x 3 mm
more info
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GaNPower International - GPI65060TO5L

GaN Power Transistor from GaNPower International
650 V, 25 to 30 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 to 30 milli-ohm
Continous Drain Current:
60 A
Total Charge:
16.1 nC
Input Capacitance:
420 pF
Output Capacitance:
143 pF
Turn-on Delay Time:
28 ns
Turn-off Delay Time:
40 ns
Rise Time:
16 ns
Fall Time:
90 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO263-5L
Applications:
Switching Power Applications, Server and Telecom P...
more info
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Infineon Technologies - IGT65R045D2

GaN Power Transistor from Infineon Technologies
650 V, 0.045 to 0.096 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.045 to 0.096 ohm
Continous Drain Current:
38 A
Pulsed Drain Current:
-76 to 76 A
Total Charge:
8.4 nC
Input Capacitance:
420 pF
Output Capacitance:
67 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2306 Image
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Efficient Power Conversion - EPC2306

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement Mode Power Transistor for Solar MPPT Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
197 A
Total Charge:
11.6 nC
Input Capacitance:
1667 pF
Output Capacitance:
482 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
AC-DC chargers, SMPS, adaptors, power supplies, Hi...
Dimensions:
3 mm x 5 mm
more info
JANSH2N7667UFBC Image
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EPC Space - JANSH2N7667UFBC

GaN Power Transistor from EPC Space
40 V Rad-Hard GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
40 V
Drain Source Resistance:
11 milli-ohm
Continous Drain Current:
19 to 30 A
Total Charge:
11.4 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
INN100W070A Image
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Innoscience - INN100W070A

GaN Power Transistor from Innoscience
100 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.5 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
125 A
Total Charge:
4.5 nC
Input Capacitance:
485 pF
Output Capacitance:
220 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
Synchronous rectification, Class-D audio, High fre...
Dimensions:
2.5 x 1.5 mm
more info
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