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GaN Power Transistors - Page 16

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 16 of 34
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GaNPower International - GPI90007DF88

GaN Power Transistor from GaNPower International
900 V, 170 to 420 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
900 V
Drain Source Resistance:
170 to 420 milli-ohm
Continous Drain Current:
7 A
Pulsed Drain Current:
16 A
Total Charge:
2.1 nC
Input Capacitance:
60 pF
Output Capacitance:
16 pF
Turn-on Delay Time:
4 ns
Turn-off Delay Time:
14 ns
Rise Time:
8 ns
Fall Time:
8 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
8 x 8 mm
more info
IGC033S10S1 Image
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Infineon Technologies - IGC033S10S1

GaN Power Transistor from Infineon Technologies
100 V, 21 to 76 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1.2 to 2.9 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.3 milli-ohm
Continous Drain Current:
21 to 76 A
Pulsed Drain Current:
330 to 700 A
Total Charge:
11 to 14 nC
Input Capacitance:
1200 to 1400 pF
Output Capacitance:
540 to 590 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom & Datacenter 48V IBC, Sync Rectification f...
more info
GAN039-650NBB Image
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Nexperia - GAN039-650NBB

GaN Power Transistor from Nexperia
650 V GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
33 to 39 milli-ohm
Continous Drain Current:
42 to 60 A
Total Charge:
30 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Temperature operating range:
-55 to +175 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CCPAK
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
12 x 12 x 2.5 mm
more info
EPC7001 Image
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Efficient Power Conversion - EPC7001

GaN Power Transistor from Efficient Power Conversion
Radiation Hard GaN Power Transistor for Satellite Applications

Product Specs

Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
2.1 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
250 A
Package Type:
Die
Applications:
Radiation hard motor drives, Deep space probes, Hi...
Dimensions:
4.1 x 1.6 mm
more info
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EPC Space - JANSH2N7683UFAC

GaN Power Transistor from EPC Space
100 V, 6 to 10 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
6 to 10 A
Total Charge:
2.2 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
more info
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Innoscience - INN650TA070AH

GaN Power Transistor from Innoscience
650 V, 53 to 122 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
53 to 122 milli-ohm
Continous Drain Current:
26 A
Pulsed Drain Current:
60 A
Total Charge:
8.5 nC
Input Capacitance:
300 pF
Output Capacitance:
135 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
7 ns
Rise Time:
9 ns
Fall Time:
9 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
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Navitas Semiconductor - NV6128

GaN Power Transistor from Navitas Semiconductor
800 V, 20 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
70 to 145 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
25 to 40 A
Total Charge:
48 nC
Output Capacitance:
47 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
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Teledyne e2v HiRel Electronics - TDG100E90BEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
100 V, 6 to 20 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
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Solid State Devices - SGF48N10MDB

GaN Power Transistor from Solid State Devices
100 V, 8 to 10 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGCDP65R270A

GaN Power Transistor from Xindao Electronic Technology
650 V, 270 to 570 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
270 to 570 milli-ohm
Continous Drain Current:
7.9 A
Pulsed Drain Current:
14 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
3.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
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GaNPower International - GPI65060DFN

GaN Power Transistor from GaNPower International
650 V, 25 to 30 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 to 30 milli-ohm
Continous Drain Current:
60 A
Total Charge:
16.1 nC
Input Capacitance:
420 pF
Output Capacitance:
143 pF
Turn-on Delay Time:
9 ns
Turn-off Delay Time:
26 ns
Rise Time:
17 ns
Fall Time:
17 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Server and Telecom P...
Dimensions:
8 x 8 mm
more info
IGLR70R270D2S Image
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Infineon Technologies - IGLR70R270D2S

GaN Power Transistor from Infineon Technologies
700 V, 7.3 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
700 V
Drain Source Resistance:
0.270 to 0.580 Ohm
Continous Drain Current:
7.3 A
Pulsed Drain Current:
-13 to 13 A
Total Charge:
7.8 nC
Input Capacitance:
74 pF
Output Capacitance:
12 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
31 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Consumer applications like charger, adapter, TV po...
more info
GAN039-650NTB Image
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Nexperia - GAN039-650NTB

GaN Power Transistor from Nexperia
650 V GaN Field Effect Transistor for Industrial Applications

Product Specs

Configuration:
Single
Gate Threshold Voltage:
4 V
Drain Source Voltage:
650 V
Drain Source Resistance:
33 milli-ohm
Continous Drain Current:
60 A
Total Charge:
30 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Temperature operating range:
-55 to +175 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CCPAK
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
12.3 x 12.2 x 2.65 mm
more info
EPC7003 Image
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Efficient Power Conversion - EPC7003

GaN Power Transistor from Efficient Power Conversion
100 V Radiation Hardened E-Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
30 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
1.8 nC
Input Capacitance:
230 pF
Output Capacitance:
119 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space applications: DC-DC power, motor drives, lid...
Dimensions:
1.7 mm x 1.1 mm
more info
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EPC Space - JANSH2N7674UBC

GaN Power Transistor from EPC Space
60 V, 1.1 to 1.8 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
60 V
Drain Source Resistance:
580 milli-ohm
Continous Drain Current:
1.1 to 1.8 A
Total Charge:
0.18 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LCC3
more info
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