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GaN Power Transistors - Page 14

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 14 of 34
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Xindao Electronic Technology - PGCDP65R600A

GaN Power Transistor from Xindao Electronic Technology
650 V, 600 to 1260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
600 to 1260 milli-ohm
Continous Drain Current:
4.8 A
Pulsed Drain Current:
8 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
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GaNPower International - GPI65010DF56

GaN Power Transistor from GaNPower International
650 V, 87 to 162 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
87 to 162 milli-ohm
Continous Drain Current:
10 A
Total Charge:
2.6 nC
Input Capacitance:
90 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
9 ns
Rise Time:
12 ns
Fall Time:
16 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
5 x 6 mm
more info
IGC033S101 Image
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Infineon Technologies - IGC033S101

GaN Power Transistor from Infineon Technologies
100 V, 21 to 76 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1.2 to 2.9 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.3 milli-ohm
Continous Drain Current:
21 to 76 A
Pulsed Drain Current:
330 to 700 A
Total Charge:
11 to 14 nC
Input Capacitance:
1200 to 1400 pF
Output Capacitance:
540 to 590 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-VSON-6
Applications:
Telecom & Datacenter 48V IBC, Sync Rectification f...
more info
GAN3R2-100CBEAZ Image
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Nexperia - GAN3R2-100CBEAZ

GaN Power Transistor from Nexperia
100 V Enhancement Mode GaN FET for Telecom Applications

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
230 A
Total Charge:
9.2 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
wafer
Package:
WLCSP8
Applications:
High power density and high efficiency power conve...
Dimensions:
3.5 mm x 2.13 mm
more info
EPC2361 Image
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Efficient Power Conversion - EPC2361

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1 milli-ohm
Continous Drain Current:
101 A
Pulsed Drain Current:
519 A
Total Charge:
28 nC
Input Capacitance:
4094 pF
Output Capacitance:
1147 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Applications:
High Power PSU AC-DC Synchronous Rectification, Hi...
Dimensions:
3 x 5 mm
more info
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EPC Space - JANSH2N7682UFAC

GaN Power Transistor from EPC Space
40 V, 9 to 15 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
40 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
9 to 15 A
Total Charge:
8 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
more info
INN100EQ025A Image
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Innoscience - INN100EQ025A

GaN Power Transistor from Innoscience
100 V Enhancement Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.8 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
320 A
Total Charge:
14 nC
Input Capacitance:
1500 pF
Output Capacitance:
700 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
En-FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
3 x 5 mm
more info
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Navitas Semiconductor - NV6125

GaN Power Transistor from Navitas Semiconductor
800 V, 8 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
175 to 362 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
12 to 16 A
Total Charge:
16 nC
Output Capacitance:
18 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
TDG650E60TEPF Image
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Teledyne e2v HiRel Electronics - TDG650E60TEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Si Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
9 x 7.6 x 0.54 mm
more info
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Xindao Electronic Technology - PGC8FN65R160A

GaN Power Transistor from Xindao Electronic Technology
650 V, 160 to 340 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 340 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
21 A
Total Charge:
7.8 nC
Input Capacitance:
378 pF
Output Capacitance:
23 pF
Turn-on Delay Time:
2.5 ns
Turn-off Delay Time:
9.7 ns
Rise Time:
7 ns
Fall Time:
28 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
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GaNPower International - GPIHV7DK

GaN Power Transistor from GaNPower International
1200 V, 158 to 250 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 1.7 V
Drain Source Voltage:
1200 V
Drain Source Resistance:
158 to 250 milli-ohm
Continous Drain Current:
7 A
Total Charge:
3.1 nC
Input Capacitance:
90 pF
Output Capacitance:
27.2 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
12 ns
Rise Time:
12 ns
Fall Time:
12 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO252
Applications:
Switching Power Applications, Server and Telecom P...
more info
IGB110S101 Image
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Infineon Technologies - IGB110S101

GaN Power Transistor from Infineon Technologies
100 V, 9 to 23 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1.2 to 2.9 V
Drain Source Voltage:
100 V
Drain Source Resistance:
9.4 to 11 milli-ohm
Continous Drain Current:
9.0 to 23 A
Pulsed Drain Current:
97 to 210 A
Total Charge:
3.4 to 4.4 nC
Input Capacitance:
300 to 340 pF
Output Capacitance:
140 to 150 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-VSON-4
Applications:
Telecom & Datacenter 48V IBC, Sync Rectification f...
more info
GAN041-650WSB Image
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Nexperia - GAN041-650WSB

GaN Power Transistor from Nexperia
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Product Specs

Configuration:
Single
Gate Threshold Voltage:
2.2 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 41 milli-ohm
Continous Drain Current:
33.4 to 47.2 A
Total Charge:
22 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Turn-on Delay Time:
14 ns
Turn-off Delay Time:
36 ns
Rise Time:
14 ns
Fall Time:
17 ns
Temperature operating range:
-55 to +175 °C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
20.45 x 15.6 x 4.95 mm
more info
EPC2067 Image
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Efficient Power Conversion - EPC2067

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.3 milli-ohm
Continous Drain Current:
69 A
Pulsed Drain Current:
409 A
Total Charge:
17.1 nC
Input Capacitance:
2178 pF
Output Capacitance:
1071 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High frequency DC-DC Converters, BLDC Motor Drives...
Dimensions:
2.85 x 3.25 mm
more info
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EPC Space - JANSH2N7681UFGC

GaN Power Transistor from EPC Space
200 V, 34 to 55 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
200 V
Drain Source Resistance:
14 milli-ohm
Continous Drain Current:
34 to 55 A
Total Charge:
14 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
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