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GaN Power Transistors - Page 22

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 22 of 34
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GaNPower International - GPIHV5DK

GaN Power Transistor from GaNPower International
1200 V, 260 to 320 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
1200 V
Drain Source Resistance:
260 to 320 milli-ohm
Continous Drain Current:
5 A
Total Charge:
1.9 nC
Input Capacitance:
90 pF
Output Capacitance:
27.2 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
5 ns
Rise Time:
24 ns
Fall Time:
27 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO252
Applications:
Switching Power Applications, Server and Telecom P...
more info
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Infineon Technologies - IGLD65R140D2

GaN Power Transistor from Infineon Technologies
650 V, 0.14 to 0.3 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.14 to 0.3 ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
-23 to 23 A
Total Charge:
2.6 nC
Input Capacitance:
130 pF
Output Capacitance:
21 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC7004 Image
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Efficient Power Conversion - EPC7004

GaN Power Transistor from Efficient Power Conversion
Radiation-Hard GaN Power Transistor for LiDAR and Deep Space Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
160 A
Total Charge:
6.4 nC
Input Capacitance:
817 pF
Output Capacitance:
485 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space Applications, DC-DC power, motor drives, lid...
Dimensions:
4.1 mm x 1.6 mm
more info
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EPC Space - JANSH2N7675UFBC

GaN Power Transistor from EPC Space
40 V, 32 to 50 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
40 V
Drain Source Resistance:
11 milli-ohm
Continous Drain Current:
32 to 50 A
Total Charge:
11 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
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Innoscience - INN100FQ025A

GaN Power Transistor from Innoscience
100 V, 2.2 to 2.8 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.2 to 2.8 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
320 A
Total Charge:
14 nC
Input Capacitance:
1500 pF
Output Capacitance:
700 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
3 x 5 mm
more info
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GaNPower International - GPI65008DF68

GaN Power Transistor from GaNPower International
650 V, 170 to 190 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
170 to 190 milli-ohm
Continous Drain Current:
8 A
Total Charge:
2.1 nC
Input Capacitance:
63 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
9 ns
Turn-off Delay Time:
8 ns
Rise Time:
11 ns
Fall Time:
15 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
6 x 8 mm
more info
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Infineon Technologies - IGT65R140D2

GaN Power Transistor from Infineon Technologies
650 V, 0.14 to 0.3 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.14 to 0.3 ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
-23 to 23 A
Total Charge:
2.6 nC
Input Capacitance:
130 pF
Output Capacitance:
21 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC7018 Image
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Efficient Power Conversion - EPC7018

GaN Power Transistor from Efficient Power Conversion
100 V Rad-Hard eGaN Power Transistor for Space Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial, Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.7 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
345 A
Total Charge:
15.2 nC
Input Capacitance:
1828 pF
Output Capacitance:
1025 pF
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC power, motor drives, lidar, ion thrusters, C...
Dimensions:
6.05 mm x 2.3 mm
more info
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EPC Space - JANSH2N7672UFAC

GaN Power Transistor from EPC Space
200 V, 2.5 to 4 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
200 V
Drain Source Resistance:
130 milli-ohm
Continous Drain Current:
2.5 to 4 A
Total Charge:
3 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
more info
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Innoscience - INN040W080A

GaN Power Transistor from Innoscience
40 V, 6.1 to 8 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
6.1 to 8 milli-ohm
Continous Drain Current:
14 A
Pulsed Drain Current:
70 A
Total Charge:
10.1 nC
Input Capacitance:
566 pF
Output Capacitance:
243 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
High side load switch, OVP protection in smart pho...
Dimensions:
1.7 x 1.7 mm
more info
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GaNPower International - GPI65015DFN

GaN Power Transistor from GaNPower International
650 V, 85 to 110 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
85 to 110 milli-ohm
Continous Drain Current:
15 A
Total Charge:
3.54 nC
Input Capacitance:
116 pF
Output Capacitance:
34 pF
Turn-on Delay Time:
4.9 ns
Turn-off Delay Time:
15 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGLR65R140D2

GaN Power Transistor from Infineon Technologies
650 V, 0.14 to 0.3 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.14 to 0.3 ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
-23 to 23 A
Total Charge:
2.6 nC
Input Capacitance:
130 pF
Output Capacitance:
21 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2071 Image
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Efficient Power Conversion - EPC2071

GaN Power Transistor from Efficient Power Conversion
100 V GaN Power Transistor for E-Mobility Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial, Automotive
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1.7 milli-ohm
Continous Drain Current:
64 A
Pulsed Drain Current:
350 A
Total Charge:
18 nC
Input Capacitance:
2664 to 3931 pF
Output Capacitance:
878 to 976 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Solar Converters, 48 V DC-DC Converters, Sync rect...
Dimensions:
4.45 mm x 2.3 mm
more info
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EPC Space - JANSH2N7685UFGC

GaN Power Transistor from EPC Space
300 V, 2.3 to 4 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
300 V
Drain Source Resistance:
490 milli-ohm
Continous Drain Current:
2.3 to 4 A
Total Charge:
2.6 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
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Innoscience - INN040FQ015A

GaN Power Transistor from Innoscience
40 V, 1.2 to 1.5 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.3 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
50 A
Pulsed Drain Current:
200 A
Total Charge:
28 nC
Input Capacitance:
3500 pF
Output Capacitance:
1600 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
Battery Charger, Battery Management System, Notebo...
Dimensions:
5 x 4 mm
more info
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