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GaN Power Transistors - Page 19

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
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EPC Space - JANSH2N7677UFBC

GaN Power Transistor from EPC Space
200 V, 15 to 24 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
200 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
15 to 24 A
Total Charge:
7 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
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Innoscience - INN650TA030AH

GaN Power Transistor from Innoscience
650 V, 26 to 55 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
26 to 55 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
100 A
Total Charge:
16 nC
Input Capacitance:
655 pF
Output Capacitance:
309 pF
Turn-on Delay Time:
53 ns
Turn-off Delay Time:
8 ns
Rise Time:
24 ns
Fall Time:
9 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
TDG650E30BSP Image
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Teledyne e2v HiRel Electronics - TDG650E30BSP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Silicon Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
PCB Mount
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.10 x 8.50 x 0.56 mm
more info
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Solid State Devices - SGF30E100Z8UB

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254Z
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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GaNPower International - GPI65030TO5L

GaN Power Transistor from GaNPower International
650 V, 29 to 70 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
29 to 70 milli-ohm
Continous Drain Current:
30 A
Total Charge:
5.8 nC
Input Capacitance:
241 pF
Output Capacitance:
61 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
15 ns
Rise Time:
12 ns
Fall Time:
13 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO263-5L
Applications:
Switching Power Applications, Adapters, Quick Char...
more info
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Infineon Technologies - IGLT65R055D2

GaN Power Transistor from Infineon Technologies
650 V, 0.055 to 0.12 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.055 to 0.12 ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
6.6 nC
Input Capacitance:
330 pF
Output Capacitance:
53 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2304 Image
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Efficient Power Conversion - EPC2304

GaN Power Transistor from Efficient Power Conversion
200 V N-Channel Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
200 V
Drain Source Resistance:
3.1 milli-ohm
Continous Drain Current:
102 A
Pulsed Drain Current:
260 A
Total Charge:
24 nC
Input Capacitance:
3195 pF
Output Capacitance:
649 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Synchronous Rectification, AC/DC Chargers, SMPS, A...
Dimensions:
3 mm x 5 mm
more info
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EPC Space - JANSH2N7676UFBC

GaN Power Transistor from EPC Space
100 V, 29 to 46 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
13 milli-ohm
Continous Drain Current:
29 to 46 A
Total Charge:
11 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
ISG3201 Image
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Innoscience - ISG3201

GaN Power Transistor from Innoscience
100 V Half-Bridge Solid-GaN Gate Driver for AI Applications

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
230 A
Total Charge:
9.2 to 12 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LGA
Applications:
AI, Server, Telecom, Super Computer, Motor Drive
Dimensions:
5 x 6.5 x 1.12 mm
more info
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GaNPower International - GPI90010DF88

GaN Power Transistor from GaNPower International
900 V, 120 to 300 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.5 V
Drain Source Voltage:
900 V
Drain Source Resistance:
120 to 300 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
22 A
Total Charge:
2.6 nC
Input Capacitance:
78 pF
Output Capacitance:
21 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
16 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Server and Telecom P...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGT65R025D2

GaN Power Transistor from Infineon Technologies
650 V, 0.025 to 0.053 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.025 to 0.053 ohm
Continous Drain Current:
70 A
Pulsed Drain Current:
-140 to 140 A
Total Charge:
16 nC
Input Capacitance:
770 pF
Output Capacitance:
122 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2305 Image
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Efficient Power Conversion - EPC2305

GaN Power Transistor from Efficient Power Conversion
150 V N-Channel Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
2.2 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
329 A
Total Charge:
21 nC
Input Capacitance:
2900 pF
Output Capacitance:
920 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
High frequency DC/DC, AC/DC Chargers and Adaptors,...
Dimensions:
3 mm x 5 mm
more info
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EPC Space - JANSH2N7680UFGC

GaN Power Transistor from EPC Space
100 V, 57 to 90 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
5 milli-ohm
Continous Drain Current:
57 to 90 A
Total Charge:
12 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
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Innoscience - INN040FQ012A

GaN Power Transistor from Innoscience
40 V, 0.9 to 1.2 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
0.9 to 1.2 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
500 A
Total Charge:
60 nC
Input Capacitance:
3500 pF
Output Capacitance:
1600 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High side load switch, OVP protection in smart pho...
Dimensions:
6 x 4 mm
more info
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Solid State Devices - SGF43E70-28

GaN Power Transistor from Solid State Devices
700 V, 39 to 76 milli-ohm, 43 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
39 to 76 milli-ohm
Continous Drain Current:
43 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LCC28
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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