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GaN Power Transistors - Page 13

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 13 of 34
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EPC Space - CDA10N05X2S

GaN Power Transistor from EPC Space
100 V, 5 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
26 to 30 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
2.2 nC
Input Capacitance:
233 pF
Output Capacitance:
170 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.7 mm
more info
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Innoscience - INN030FQ015A

GaN Power Transistor from Innoscience
30 V, 1.2 to 1.5 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.1 V
Drain Source Voltage:
30 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
300 A
Total Charge:
22.8 nC
Input Capacitance:
3.4 nF
Output Capacitance:
1.8 nF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Battery charger, B...
Dimensions:
5 x 4 mm
more info
NV6136A-RA Image
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Navitas Semiconductor - NV6136A-RA

GaN Power Transistor from Navitas Semiconductor
700 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Drain Source Voltage:
700 V
Drain Source Resistance:
238 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
16 A
Total Charge:
17 nC
Output Capacitance:
22 pF
Turn-on Delay Time:
25 ns
Turn-off Delay Time:
22 ns
Rise Time:
12 ns
Fall Time:
7 ns
Temperature operating range:
-40 to 125 degree C
Package Type:
Surface Mount
Package:
PQFN 6 x 8
Applications:
AC-DC, DC-DC, DC-AC, QR flyback, ACF, Buck, Boost,...
Dimensions:
8 x 6 mm
more info
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Ancora Semiconductor - FET-E6007PB010

GaN Power Transistor from Ancora Semiconductor
650 V, 64 to 162.5 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
64 to 162.5 milli-ohm
Continous Drain Current:
9.5 to 21.3 A
Pulsed Drain Current:
30.1 to 67.2 A
Total Charge:
5.38 nC
Input Capacitance:
199.9 pF
Output Capacitance:
49.4 pF
Turn-on Delay Time:
2.34 ns
Turn-off Delay Time:
10.46 ns
Rise Time:
3.35 ns
Fall Time:
6.11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
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Solid State Devices - SGF48N20

GaN Power Transistor from Solid State Devices
200 V, 8 to 11 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
8 to 11 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
200 A
Total Charge:
12 to 15 nC
Input Capacitance:
950 to 1140 pF
Output Capacitance:
450 to 680 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMG
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGCDP65R900A

GaN Power Transistor from Xindao Electronic Technology
650 V, 900 to 1900 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
900 to 1900 milli-ohm
Continous Drain Current:
3.6 A
Pulsed Drain Current:
5 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
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GaNPower International - GPIHV15DK

GaN Power Transistor from GaNPower International
1200 V, 100 to 110 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
1200 V
Drain Source Resistance:
100 to 110 milli-ohm
Continous Drain Current:
15 A
Total Charge:
6.5 nC
Input Capacitance:
124 pF
Output Capacitance:
38 pF
Turn-on Delay Time:
14 ns
Turn-off Delay Time:
15 ns
Rise Time:
43 ns
Fall Time:
16 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO252
Applications:
Switching Power Applications, UPS, Inverters
more info
IGLT65R055B2 Image
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Infineon Technologies - IGLT65R055B2

GaN Power Transistor from Infineon Technologies
340 V, -21.8 to 21.8 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.8 to 1.15 V
Drain Source Voltage:
650 V
Drain Source Resistance:
55 to 103 milli-ohm
Continous Drain Current:
-21.8 to 21.8 A
Pulsed Drain Current:
3000 mA
Total Charge:
5.4 nc
Input Capacitance:
346 pF
Output Capacitance:
147 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
1-phase string inverter solutions, 3-phase string ...
more info
GAN140-650EBEZ Image
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Nexperia - GAN140-650EBEZ

GaN Power Transistor from Nexperia
650 V Enhancement Mode GaN Power Transistor for Datacom Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
140 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 mm
more info
EPC2070 Image
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Efficient Power Conversion - EPC2070

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement Mode GaN Power Transistor for LiDAR Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
18 to 23 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
34 A
Total Charge:
2.5 nC
Input Capacitance:
386 pF
Output Capacitance:
123 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC from 48 V–60 V input, ToF mod...
Dimensions:
1.3 x 0.85 mm
more info
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EPC Space - CDA20N04X4S

GaN Power Transistor from EPC Space
200 V, 4 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
65 to 100 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
6 A
Total Charge:
3 nC
Input Capacitance:
150 pF
Output Capacitance:
90 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.5 mm
more info
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Innoscience - INN060FQ043A

GaN Power Transistor from Innoscience
60 V, 3 to 4.3 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.4 V
Drain Source Voltage:
60 V
Drain Source Resistance:
3 to 4.3 milli-ohm
Continous Drain Current:
24 A
Pulsed Drain Current:
160 A
Total Charge:
6.2 nC
Input Capacitance:
805 pF
Output Capacitance:
428 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
3 x 4 mm
more info
NV6117 Image
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Navitas Semiconductor - NV6117

GaN Power Transistor from Navitas Semiconductor
800 V GaNFast Power IC for Telecom Applications

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
120 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
24 A
Total Charge:
27 nC
Output Capacitance:
27 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
5 x 6 mm
more info
TDG650E601TSP Image
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Teledyne e2v HiRel Electronics - TDG650E601TSP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
PCB Mount
Applications:
Battery management, Traction Drive, dc-dc Converte...
Dimensions:
9.00 x 7.64 mm
more info
CGD65A055S2 Image
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Cambridge GaN Devices - CGD65A055S2

GaN Power Transistor from Cambridge GaN Devices
650 V GaN-on-Si Power Transistor for Data Centers & Gaming Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
77 milli-ohm
Continous Drain Current:
27 A
Total Charge:
6 nC
Output Capacitance:
66 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
26 ns
Rise Time:
7 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Server power ...
Dimensions:
8 mm x 8 mm
more info
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