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GaN Power Transistors - Page 23

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
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GaNPower International - GPI65007DF56

GaN Power Transistor from GaNPower International
650 V, 170 to 360 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
170 to 360 milli-ohm
Continous Drain Current:
7 A
Pulsed Drain Current:
16 A
Total Charge:
2.1 nC
Input Capacitance:
76.1 pF
Output Capacitance:
20.9 pF
Turn-on Delay Time:
4 ns
Turn-off Delay Time:
14 ns
Rise Time:
8 ns
Fall Time:
8 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
5 x 6 mm
more info
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Infineon Technologies - IGT65R055D2

GaN Power Transistor from Infineon Technologies
650 V, 0.055 to 0.12 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.055 to 0.12 ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
6.6 nC
Input Capacitance:
330 pF
Output Capacitance:
53 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2066 Image
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Efficient Power Conversion - EPC2066

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
40 V
Drain Source Resistance:
0.8 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
639 A
Total Charge:
25 nC
Input Capacitance:
3539 to 4523 pF
Output Capacitance:
1670 to 1919 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High Density DC-DC Conversion, Synchronous Rectifi...
Dimensions:
6.05 mm x 2.3 mm
more info
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EPC Space - JANSH2N7668UFBC

GaN Power Transistor from EPC Space
100 V, 19 to 30 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
15 milli-ohm
Continous Drain Current:
19 to 30 A
Total Charge:
11 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
INN100W135A-Q Image
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Innoscience - INN100W135A-Q

GaN Power Transistor from Innoscience
100 V Automotive-Grade E-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
10 to 13.5 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
75 A
Total Charge:
3.2 nC
Input Capacitance:
380 pF
Output Capacitance:
220 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
LiDAR Application, High Power Density DC-DC Conver...
Dimensions:
2.13 x 1.63 mm
more info
GPI65005DF Image
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GaNPower International - GPI65005DF

GaN Power Transistor from GaNPower International
650 V Enhancement Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
235 to 580 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
11 A
Total Charge:
1.6 nC
Input Capacitance:
39 pF
Output Capacitance:
11.8 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
16 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Server and Telecom P...
Dimensions:
5 x 6 mm
more info
IGLD65R110D2 Image
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Infineon Technologies - IGLD65R110D2

GaN Power Transistor from Infineon Technologies
650 V GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.11 to 0.24 ohm
Continous Drain Current:
14 A
Pulsed Drain Current:
-30 to 30 A
Total Charge:
3.4 nC
Input Capacitance:
170 pF
Output Capacitance:
27 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC7007 Image
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Efficient Power Conversion - EPC7007

GaN Power Transistor from Efficient Power Conversion
200 V Radiation Hardened GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
17 to 25 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
80 A
Total Charge:
5.4 nC
Input Capacitance:
525 pF
Output Capacitance:
256 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC power, motor drives, lidar, ion thrusters, C...
Dimensions:
3.6 mm x 1.6 mm
more info
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EPC Space - JANSH2N7671UFAC

GaN Power Transistor from EPC Space
100 V, 3 to 5 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
3 to 5 A
Total Charge:
2.2 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
more info
INN040W120A Image
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Innoscience - INN040W120A

GaN Power Transistor from Innoscience
40 V Enhancement Mode GaN-on-Silicon Transistor for Smartphone Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
9 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
50 A
Total Charge:
7.2 nC
Input Capacitance:
405 pF
Output Capacitance:
174 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
wafer
Package:
WLCSP
Applications:
High side load switch, OVP protection in smart pho...
Dimensions:
1.2 x 1.7 mm
more info
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Infineon Technologies - IGLT65R025D2

GaN Power Transistor from Infineon Technologies
650 V, 0.025 to 0.053 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.025 to 0.053 ohm
Continous Drain Current:
67 A
Pulsed Drain Current:
-130 to 130 A
Total Charge:
16 nC
Input Capacitance:
770 pF
Output Capacitance:
122 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2221 Image
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Efficient Power Conversion - EPC2221

GaN Power Transistor from Efficient Power Conversion
100 V GaN Power Transistor for Multi-Channel Lidar Applications

Product Specs

Configuration:
Dual
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
58 milliohms
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.2 nC
Input Capacitance:
94 to 150 pF
Output Capacitance:
63 to 72 pF
Temperature operating range:
-40 to 150 degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive, High Frequency DC-DC Conversion, Synch...
Dimensions:
1.35 x 1.35 mm
more info
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EPC Space - EPC7020GSH

GaN Power Transistor from EPC Space
200 V, 9.5 to 14.5 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
9.5 to 14.5 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
200 A
Total Charge:
13.5 nC
Input Capacitance:
1313 pF
Output Capacitance:
640 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
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Innoscience - INN100FQ016A

GaN Power Transistor from Innoscience
100 V, 1.4 to 1.8 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1.4 to 1.8 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
320 A
Total Charge:
22 nC
Input Capacitance:
2500 pF
Output Capacitance:
1100 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
4 x 6 mm
more info
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Infineon Technologies - IGLD65R055D2

GaN Power Transistor from Infineon Technologies
650 V, 0.055 to 0.12 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.055 to 0.12 ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
6.6 nC
Input Capacitance:
330 pF
Output Capacitance:
53 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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