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GaN Power Transistors - Page 24

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 24 of 34
EPC7014 Image
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Efficient Power Conversion - EPC7014

GaN Power Transistor from Efficient Power Conversion
60 V Radiation-Hard GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.6 V
Drain Source Voltage:
60 V
Drain Source Resistance:
240 milli-ohm
Continous Drain Current:
2.4 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
17 to 26 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Satellite EPS & avionics, Deep space probes, High ...
Dimensions:
0.9 x 0.9 mm
more info
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EPC Space - EPC7018DSH

GaN Power Transistor from EPC Space
100 V, 5.2 to 6 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.2 to 6 milli-ohm
Continous Drain Current:
74 A
Pulsed Drain Current:
345 A
Total Charge:
11.7 nC
Input Capacitance:
1240 pF
Output Capacitance:
740 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-D
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
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Innoscience - INN100W027A

GaN Power Transistor from Innoscience
100 V, 2.1 to 2.7 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.1 to 2.7 milli-ohm
Continous Drain Current:
64 A
Pulsed Drain Current:
320 A
Total Charge:
13 nC
Input Capacitance:
1400 pF
Output Capacitance:
650 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
Synchronous rectification, Class-D audio, High fre...
Dimensions:
4.45 x 2.30 mm
more info
IGOT65R055D2 Image
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Infineon Technologies - IGOT65R055D2

GaN Power Transistor from Infineon Technologies
650 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.055 to 0.12 ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
6.6 nC
Input Capacitance:
330 pF
Output Capacitance:
53 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2050 Image
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Efficient Power Conversion - EPC2050

GaN Power Transistor from Efficient Power Conversion
350 V Enhancement Mode GaN Power Transistor

Product Specs

Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
350 V
Drain Source Resistance:
55 milliohms
Continous Drain Current:
6.3 A
Pulsed Drain Current:
26 A
Total Charge:
2.9 to 4 nC
Input Capacitance:
423 to 628 pF
Output Capacitance:
81 to 122 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Class D Audio, LED Lighting, Lidar, Motor Drive, H...
Dimensions:
1.95 x 1.95 mm
more info
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EPC Space - EPC7003ASH

GaN Power Transistor from EPC Space
100 V, 42 to 45 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
42 to 45 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
2.2 nC
Input Capacitance:
233 pF
Output Capacitance:
170 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
INN80LA01 Image
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Innoscience - INN80LA01

GaN Power Transistor from Innoscience
Automotive Qualified Enhancement Mode GaN-on-Si Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.15 V
Drain Source Voltage:
80 V
Drain Source Resistance:
6 milli-ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
180 A
Total Charge:
6.5 to 8 nC
Input Capacitance:
1200 pF
Output Capacitance:
450 pF
Temperature operating range:
-40 to 125 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LGA
Applications:
LiDAR Application, Synchronous Rectification & Cla...
Dimensions:
3.40 x 2.40 mm
more info
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Infineon Technologies - IGLR65R200D2

GaN Power Transistor from Infineon Technologies
650 V, 0.2 to 0.43 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.2 to 0.43 ohm
Continous Drain Current:
9.2 A
Pulsed Drain Current:
-16 to 16 A
Total Charge:
1.8 nC
Input Capacitance:
90 pF
Output Capacitance:
15 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC7019 Image
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Efficient Power Conversion - EPC7019

GaN Power Transistor from Efficient Power Conversion
Rad-Hard GaN Power Transistor for Deep Space Applications

Product Specs

Industry:
Space
Gate Threshold Voltage:
800 to 2500 mV
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 degree C
Package Type:
Die
Applications:
commercial satellite EPS & avionics, deep space pr...
Dimensions:
6.05 x 2.3 mm
more info
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EPC Space - EPC7004BSH

GaN Power Transistor from EPC Space
100 V, 13 to 15 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
13 to 15 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
160 A
Total Charge:
11 nC
Input Capacitance:
1000 pF
Output Capacitance:
700 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
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Innoscience - INN700TK480B

GaN Power Transistor from Innoscience
700 V, 365 to 790 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
365 to 790 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
9 A
Total Charge:
1.3 nC
Input Capacitance:
43 pF
Output Capacitance:
13 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
3 ns
Rise Time:
5 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
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Infineon Technologies - IGLT65R110D2

GaN Power Transistor from Infineon Technologies
650 V, 0.11 to 0.24 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.11 to 0.24 ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
-30 to 30 A
Total Charge:
3.4 nC
Input Capacitance:
170 pF
Output Capacitance:
27 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2065 Image
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Efficient Power Conversion - EPC2065

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
80 V
Drain Source Resistance:
3.6 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
215 A
Total Charge:
9.4 to 12.2 nC
Input Capacitance:
1097 to 1449 pF
Output Capacitance:
534 to 801 pF
Temperature operating range:
-40 to 150 °C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
BLDC Motor Drives, Class-D Audio, DC-DC Converters...
Dimensions:
3.5 x 1.95 mm
more info
EPC7030G Image
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EPC Space - EPC7030G

GaN Power Transistor from EPC Space
300 V Radiation Hard eGaN Power Transistor

Product Specs

Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
300 V
Drain Source Resistance:
32 milli-ohm
Continous Drain Current:
50 A
Pulsed Drain Current:
200 A
Total Charge:
15 nC
Input Capacitance:
1155 pF
Output Capacitance:
235 pF
Temperature operating range:
-55 to 150 Degree C
Qualification:
MIL-STD-750
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
Dimensions:
8 x 5.6 mm
more info
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Innoscience - INN700TJ240C

GaN Power Transistor from Innoscience
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
7 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
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