1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Power Transistors

GaN Power Transistors - Page 26

509 GaN Power Transistors from 22 manufacturers meet your specification.
Filters (0)
509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 26 of 34
Download Datasheet  Request Quote  Product Details

Innoscience - INN700D190C

GaN Power Transistor from Innoscience
700 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
8 x 8 mm
more info
IGI60F2727A1L AUMA1 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IGI60F2727A1L AUMA1

GaN Power Transistor from Infineon Technologies
4.5 A GaN Half-Bridge Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
270 to 490 milli-ohm
Continous Drain Current:
4.5 A
Pulsed Drain Current:
12.2 A
Total Charge:
1.2 nC
Input Capacitance:
77 pF
Output Capacitance:
14.6 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adaptors, Low power motor drive, LED l...
Dimensions:
8 x 8 mm
more info
EPC2045 Image
Download Datasheet  Request Quote  Product Details

Efficient Power Conversion - EPC2045

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
130 A
Total Charge:
6 to 7.8 nC
Input Capacitance:
767 to 1016 pF
Output Capacitance:
295 to 443 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Open Rack Server Architectures, Lidar/Pulsed Power...
Dimensions:
2.5 x 1.5 mm
more info
EPC7019G Image
Download Datasheet  Request Quote  Product Details

EPC Space - EPC7019G

GaN Power Transistor from EPC Space
40 V GaN Power Transistor for Space Applications

Product Specs

Configuration:
Dual
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8.0 x 5.6 mm
more info
Download Datasheet  Request Quote  Product Details

Innoscience - INN650DA190A

GaN Power Transistor from Innoscience
650 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
5 x 6 mm
more info
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IGLR60R340D1

GaN Power Transistor from Infineon Technologies
600 V, 270 to 490 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
270 to 490 milli-ohm
Continous Drain Current:
8.2 A
Pulsed Drain Current:
12.2 A
Total Charge:
1.2 nC
Input Capacitance:
87.7 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
12 ns
Rise Time:
6 ns
Fall Time:
40 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
more info
EPC2204 Image
Download Datasheet  Request Quote  Product Details

Efficient Power Conversion - EPC2204

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
4.4 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
125 A
Total Charge:
5.7 to 7.4 nC
Input Capacitance:
644 to 851 pF
Output Capacitance:
304 to 456 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, Isolated DC-DC Converters, Lidar...
Dimensions:
2.5 x 1.5 mm
more info
FBG10N30B Image
Download Datasheet  Request Quote  Product Details

EPC Space - FBG10N30B

GaN Power Transistor from EPC Space
100 V Radiation-Hard Enhancement Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
100 V
Drain Source Resistance:
12 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.3 to 11 nC
Input Capacitance:
850 to 1000 pF
Output Capacitance:
500 to 700 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.4 x 3.6 x 1.9 mm
more info
Download Datasheet  Request Quote  Product Details

Innoscience - INN700TK600B

GaN Power Transistor from Innoscience
700 V, 470 to 1020 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
470 to 1020 milli-ohm
Continous Drain Current:
3.3 A
Pulsed Drain Current:
6 A
Total Charge:
0.7 nC
Input Capacitance:
30 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
0.6 ns
Turn-off Delay Time:
10.6 ns
Rise Time:
3.7 ns
Fall Time:
9.8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IGI60F100A1LAU MA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
EPC2110 Image
Download Datasheet  Request Quote  Product Details

Efficient Power Conversion - EPC2110

GaN Power Transistor from Efficient Power Conversion
120 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
120 V
Drain Source Resistance:
80 to 110 milli-ohm
Continous Drain Current:
3.4 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.1 nC
Input Capacitance:
85 to 100 pF
Output Capacitance:
45 to 70 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Ultra High Frequency DC-DC Conversion, Wireless Po...
Dimensions:
1.35 x 1.35 mm
more info
Download Datasheet  Request Quote  Product Details

EPC Space - FBG10N05A

GaN Power Transistor from EPC Space
100 V, 5 A, GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
36 to 45 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
1.7 to 2.2 nC
Input Capacitance:
207 to 233 pF
Output Capacitance:
133 to 170 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
Download Datasheet  Request Quote  Product Details

Innoscience - INN650DA350A

GaN Power Transistor from Innoscience
650 V, 270 to 580 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
270 to 580 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
10 A
Total Charge:
1.5 nC
Input Capacitance:
50 pF
Output Capacitance:
15 pF
Turn-on Delay Time:
0.9 ns
Turn-off Delay Time:
1.2 ns
Rise Time:
3.5 ns
Fall Time:
6.1 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
5 x 6 mm
more info
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IGOT60R042D1

GaN Power Transistor from Infineon Technologies
600 V, 37 to 72 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
37 to 72 milli-ohm
Continous Drain Current:
19 A
Pulsed Drain Current:
90 A
Total Charge:
8.8 nC
Input Capacitance:
649 pF
Output Capacitance:
97 pF
Turn-on Delay Time:
13 ns
Turn-off Delay Time:
19 ns
Rise Time:
8 ns
Fall Time:
11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
EPC2034C Image
Download Datasheet  Request Quote  Product Details

Efficient Power Conversion - EPC2034C

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
6 to 8 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
213 A
Total Charge:
11.1 to 13.8 nC
Input Capacitance:
1155 to 1386 pF
Output Capacitance:
641 to 962 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC/DC Conversion, Multi-level AC/DC...
Dimensions:
4.6 x 2.6 mm
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Configuration

Industry

Gate Threshold Voltage

Apply

Drain Source Voltage

Apply

Drain Source Resistance

Apply

Continous Drain Current

Apply

Pulsed Drain Current

Apply

Total Charge

Apply

Qualification

RoHS Compliant

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.