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GaN Power Transistors - Page 25

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 25 of 34
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Infineon Technologies - IGLD65R080D2

GaN Power Transistor from Infineon Technologies
650 V, 0.08 to 0.17 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.08 to 0.17 ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
-42 to 42 A
Total Charge:
4.6 nC
Input Capacitance:
230 pF
Output Capacitance:
37 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2069 Image
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Efficient Power Conversion - EPC2069

GaN Power Transistor from Efficient Power Conversion
40 V, 2.25 mOhm E-mode GaN Transistor

Product Specs

Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.60 to 2.25 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
422 A
more info
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EPC Space - EPC7019DSH

GaN Power Transistor from EPC Space
40 V, 3.7 to 5 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 to 5 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-D
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
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Innoscience - INN700TH350B

GaN Power Transistor from Innoscience
700 V, 270 to 580 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
270 to 580 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
10 A
Total Charge:
1.5 nC
Input Capacitance:
50 pF
Output Capacitance:
15 pF
Turn-on Delay Time:
0.9 ns
Turn-off Delay Time:
1.2 ns
Rise Time:
3.5 ns
Fall Time:
6.1 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
IGT65R035D2 Image
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Infineon Technologies - IGT65R035D2

GaN Power Transistor from Infineon Technologies
650 V GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.035 to 0.075 ohm
Continous Drain Current:
49 A
Pulsed Drain Current:
-90 to 90 A
Total Charge:
11 nC
Input Capacitance:
530 pF
Output Capacitance:
85 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
EPC2212 Image
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Efficient Power Conversion - EPC2212

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
10 to 13.5 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
75 A
Total Charge:
3.2 to 4 nC
Input Capacitance:
339 to 407 pF
Output Capacitance:
238 to 357 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Lidar/Pulsed Power Applications, High Power Densit...
Dimensions:
2.1 x 1.6 mm
more info
EPC7007BSH Image
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EPC Space - EPC7007BSH

GaN Power Transistor from EPC Space
Radiation Hard GaN Power Transistor for Avionics & Deep Space Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
200 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
80 A
Total Charge:
5.4 nC
Input Capacitance:
525 pF
Output Capacitance:
256 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.461 x 3.683 mm
more info
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Innoscience - INN700DC140A

GaN Power Transistor from Innoscience
700 V, 106 to 230 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5 x 6 mm
more info
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Infineon Technologies - IGI60F2020A1L AUMA1

GaN Power Transistor from Infineon Technologies
600 V, 200 to 360 milli-ohm GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
200 to 360 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
14.1 A
Total Charge:
1.5 nC
Input Capacitance:
100 pF
Output Capacitance:
19 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adapters, Server, telecom & networking...
Dimensions:
8 x 8 mm
more info
EPC2034 Image
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Efficient Power Conversion - EPC2034

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
7 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
200 A
Total Charge:
8.8 to 11 nC
Input Capacitance:
950 to 1140 pF
Output Capacitance:
450 to 680 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Motor Drive, Indu...
Dimensions:
4.6 x 2.6 mm
more info
EPC7018GSH Image
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EPC Space - EPC7018GSH

GaN Power Transistor from EPC Space
100 V Radiation-Hardened GaN Power Transistor for Satellite Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.2 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
345 A
Total Charge:
11.7 nC
Input Capacitance:
1240 pF
Output Capacitance:
740 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 x 1.6 mm
more info
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Innoscience - INN700DC350A

GaN Power Transistor from Innoscience
700 V, 270 to 580 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
270 to 580 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
10 A
Total Charge:
1.5 nC
Input Capacitance:
50 pF
Output Capacitance:
15 pF
Turn-on Delay Time:
0.9 ns
Turn-off Delay Time:
1.2 ns
Rise Time:
3.5 ns
Fall Time:
6.1 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
5 x 6 mm
more info
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Infineon Technologies - IGO60R042D1

GaN Power Transistor from Infineon Technologies
600 V, 37 to 72 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
37 to 72 milli-ohm
Continous Drain Current:
19 A
Pulsed Drain Current:
90 A
Total Charge:
8.8 nC
Input Capacitance:
649 pF
Output Capacitance:
97 pF
Turn-on Delay Time:
13 ns
Turn-off Delay Time:
19 ns
Rise Time:
8 ns
Fall Time:
11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
EPC2218 Image
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Efficient Power Conversion - EPC2218

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
231 A
Total Charge:
10.5 to 13.6 nC
Input Capacitance:
1189 to 1570 pF
Output Capacitance:
562 to 843 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, Isolated DC-DC Converters, Lidar...
Dimensions:
3.5 x 1.95 mm
more info
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EPC Space - FBG20N18B

GaN Power Transistor from EPC Space
200 V, 18 A, GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
21 to 28 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
5 to 7 nC
Input Capacitance:
637 to 900 pF
Output Capacitance:
300 to 359 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
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