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GaN Power Transistors - Page 27

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 27 of 34
FBG20N04A Image
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EPC Space - FBG20N04A

GaN Power Transistor from EPC Space
200 V Radiation-Hardened GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
68 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
16 A
Total Charge:
1.6 to 3 nC
Input Capacitance:
106 to 150 pF
Output Capacitance:
72 to 90 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
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Innoscience - INN700TK240C

GaN Power Transistor from Innoscience
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
IGLR60R260D1 Image
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Infineon Technologies - IGLR60R260D1

GaN Power Transistor from Infineon Technologies
600 V Enhancement Mode GaN Power Transistor for SMPS Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
370 milli-ohm
Continous Drain Current:
10.4 A
Pulsed Drain Current:
15.9 A
Total Charge:
1.5 nC
Input Capacitance:
110 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
12 ns
Turn-off Delay Time:
14 ns
Rise Time:
7 ns
Fall Time:
30 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Industrial and Consumer SMPS (based on the half-br...
Dimensions:
6 x 5 x 1.1 mm
more info
EPC2051 Image
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Efficient Power Conversion - EPC2051

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
20 to 25 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
37 A
Total Charge:
1.8 to 2.3 nC
Input Capacitance:
224 to 297 pF
Output Capacitance:
86 to 129 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Open Rack Server Architectures, Lidar/Pulsed Power...
Dimensions:
0.85 x 1.3 mm
more info
EPC7014UB Image
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EPC Space - EPC7014UB

GaN Power Transistor from EPC Space
60 V Radiation Hard GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
0.142 to 0.184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
0.1 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Commercial Satellite EPS & Avionics, Deep Space Pr...
Dimensions:
2.9 x 2.4 x 1.2 mm
more info
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Innoscience - INN700DA600B

GaN Power Transistor from Innoscience
700 V, 470 to 1020 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
470 to 1020 milli-ohm
Continous Drain Current:
3.3 A
Pulsed Drain Current:
6 A
Total Charge:
0.7 nC
Input Capacitance:
30 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
0.6 ns
Turn-off Delay Time:
10.6 ns
Rise Time:
3.7 ns
Fall Time:
9.8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
5 x 6 mm
more info
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Infineon Technologies - IGI60F1414A1L AUMA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adapters, Server, telecom & networking...
Dimensions:
8 x 8 mm
more info
EPC2033 Image
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Efficient Power Conversion - EPC2033

GaN Power Transistor from Efficient Power Conversion
150 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
150 V
Drain Source Resistance:
5 to 7 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
260 A
Total Charge:
12 to 15 nC
Input Capacitance:
1160 to 1400 pF
Output Capacitance:
480 to 720 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC conversion, Motor Drive, Indu...
Dimensions:
4.6 x 2.6 mm
more info
FBG30N04CSH Image
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EPC Space - FBG30N04CSH

GaN Power Transistor from EPC Space
300 V Radiation Hard eGaN HEMT for Satellite Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.8 V
Drain Source Voltage:
300 V
Drain Source Resistance:
210 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
12 A
Total Charge:
1.6 to 2.6 nC
Input Capacitance:
380 to 450 pF
Output Capacitance:
48 to 60 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Commercial Satellite EPS & Avionics, Deep Space Pr...
Dimensions:
4.445 x 4.445 x 2.286 mm
more info
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Innoscience - INN700TJ240B

GaN Power Transistor from Innoscience
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
7 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
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Infineon Technologies - IGT60R190D1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
13 ns
Turn-off Delay Time:
12 ns
Rise Time:
14 ns
Fall Time:
14 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
EPC2053 Image
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Efficient Power Conversion - EPC2053

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3.1 to 3.8 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
246 A
Total Charge:
11.4 to 14.8 nC
Input Capacitance:
1453 to 1924 pF
Output Capacitance:
642 to 963 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
48 V Servers, Lidar/Pulsed Power, Isolated Power S...
Dimensions:
3.5 x 2 mm
more info
FBG04N08A Image
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EPC Space - FBG04N08A

GaN Power Transistor from EPC Space
40 V Radiation Hard GaN HEMT for Deep Space Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.2 to 2.8 nC
Input Capacitance:
283 to 312 pF
Output Capacitance:
170 to 270 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 x 2.29 mm
more info
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Innoscience - INN650DA600A

GaN Power Transistor from Innoscience
650 V, 470 to 1020 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
470 to 1020 milli-ohm
Continous Drain Current:
3.3 A
Pulsed Drain Current:
6 A
Total Charge:
0.7 nC
Input Capacitance:
30 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
0.6 ns
Turn-off Delay Time:
10.6 ns
Rise Time:
3.8 ns
Fall Time:
9.8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
5 x 6 mm
more info
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Infineon Technologies - IGI60F200A1LAU MA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
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