GaN Power Transistors - Page 31

509 GaN Power Transistors from 22 manufacturers meet your specification.
509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 31 of 34
700 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
8 x 8 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
400 to 550 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
2.4 A
Total Charge:
115 to 145 nC
Input Capacitance:
14 to 17 pF
Output Capacitance:
6.5 to 10 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
700 V, 365 to 790 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
365 to 790 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
9 A
Total Charge:
1.3 nC
Input Capacitance:
43 pF
Output Capacitance:
13 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
3 ns
Rise Time:
5 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5 x 6 mm
more info
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
1.8 to 2.2 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
390 A
Total Charge:
15 to 19 nC
Input Capacitance:
1610 to 1940 pF
Output Capacitance:
1100 to 1650 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
48 V Automotive Power, Open Rack Server Architectu...
Dimensions:
6.05 x 2.3 mm
more info
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
8 x 8 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2100 to 3300 milli-ohm
Continous Drain Current:
0.5 A
Pulsed Drain Current:
0.5 A
Total Charge:
44 nC
Input Capacitance:
7 to 8.4 pF
Output Capacitance:
1.6 to 2.4 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC Conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
650 V, 270 to 580 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
270 to 580 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
10 A
Total Charge:
1.5 nC
Input Capacitance:
50 pF
Output Capacitance:
15 pF
Turn-on Delay Time:
0.9 ns
Turn-off Delay Time:
1.2 ns
Rise Time:
3.5 ns
Fall Time:
6.1 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
8 x 8 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
55 to 70 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
18 A
Total Charge:
730 to 900 nC
Input Capacitance:
79 to 95 pF
Output Capacitance:
52 to 92 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Class-D Audio
Dimensions:
1.35 x 1.35 mm
more info
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5 x 6 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.4 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
120 to 160 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
7.5 A
Total Charge:
360 to 480 nC
Input Capacitance:
43 to 55 pF
Output Capacitance:
25 to 36 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Ultra High Speed DC-DC Conversion, RF Envelope Tra...
Dimensions:
2.1 x 0.85 mm
more info
700 V, 106 to 230 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5 x 6 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
62 to 73 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
18 A
Total Charge:
700 to 910 nC
Input Capacitance:
75 to 90 pF
Output Capacitance:
50 to 75 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC Conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
700 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
2 to 11.5 milli-ohm
Continous Drain Current:
10 to 40 A
Pulsed Drain Current:
80 to 350 A
Total Charge:
3.3 to 17 nC
Input Capacitance:
360 to 1720 pF
Output Capacitance:
190 to 1320 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Point-of-Load (POL) Converte...
Dimensions:
6.05 x 2.3 mm
more info
700 V, 106 to 230 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info

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Qualification

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