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GaN Power Transistors - Page 32

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
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EPC2203 Image
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Efficient Power Conversion - EPC2203

GaN Power Transistor from Efficient Power Conversion
80 V AEC-Q101 Qualified GaN Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
53 to 80 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
17 A
Total Charge:
670 to 830 nC
Input Capacitance:
73 to 88 pF
Output Capacitance:
47 to 71 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Lidar/pulsed power applications, High power densit...
Dimensions:
0.9 x 0.9 mm
more info
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Innoscience - INN700TK140C

GaN Power Transistor from Innoscience
700 V, 106 to 230 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
EPC2219 Image
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Efficient Power Conversion - EPC2219

GaN Power Transistor from Efficient Power Conversion
65 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
65 V
Drain Source Resistance:
1700 to 3300 milli-ohm
Continous Drain Current:
0.5 A
Pulsed Drain Current:
0.5 A
Total Charge:
49 to 64 nC
Input Capacitance:
7 to 10 pF
Output Capacitance:
2 to 3 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Lidar/pulsed power applications, High speed gate d...
Dimensions:
0.9 x 0.9 mm
more info
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Innoscience - ISG6102

GaN Power Transistor from Innoscience
-7 to 700 V, 150 to 210 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
-7 to 700 V
Drain Source Resistance:
150 to 210 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
16 A
Output Capacitance:
27.6 pF
Turn-on Delay Time:
25 ns
Turn-off Delay Time:
35 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
AC-DC, DC-DC, DC-AC Power Supply, PFC, QR Flyback,...
Dimensions:
6 x 8 mm
more info
EPC2024 Image
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Efficient Power Conversion - EPC2024

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
560 A
Total Charge:
18 to 24 nC
Input Capacitance:
1920 to 2300 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
6.05 x 2.3 mm
more info
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Innoscience - INN700DA350B

GaN Power Transistor from Innoscience
700 V, 270 to 580 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
270 to 580 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
10 A
Total Charge:
1.5 nC
Input Capacitance:
50 pF
Output Capacitance:
15 pF
Turn-on Delay Time:
0.9 ns
Turn-off Delay Time:
1.2 ns
Rise Time:
3.5 ns
Fall Time:
6.1 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
5 x 6 mm
more info
EPC2039 Image
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Efficient Power Conversion - EPC2039

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
20 to 25 milli-ohm
Continous Drain Current:
6.8 A
Pulsed Drain Current:
50 A
Total Charge:
1910 to 2370 nC
Input Capacitance:
210 to 260 pF
Output Capacitance:
115 to 175 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Ultra High Speed DC-DC Conversion, Wireless Power ...
Dimensions:
1.35 x 1.35 mm
more info
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Innoscience - INN700DA190B

GaN Power Transistor from Innoscience
700 V, 138 to 300 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
5 x 6 mm
more info
EPC2102 Image
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Efficient Power Conversion - EPC2102

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
3.6 to 4.9 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
220 A
Total Charge:
8 to 11 nC
Input Capacitance:
850 to 1020 pF
Output Capacitance:
500 to 915 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC
Dimensions:
6.05 x 2.3 mm
more info
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Innoscience - INN700DA240B

GaN Power Transistor from Innoscience
700 V, 165 to 360 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5 x 6 mm
more info
EPC2030 Image
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Efficient Power Conversion - EPC2030

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.8 to 2.4 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
490 A
Total Charge:
17 to 22 nC
Input Capacitance:
1960 to 2360 pF
Output Capacitance:
1120 to 1680 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
4.6 x 2.6 mm
more info
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Innoscience - ISG6103

GaN Power Transistor from Innoscience
-7 to 700 V, 230 to 320 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
-7 to 700 V
Drain Source Resistance:
230 to 320 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
10 A
Output Capacitance:
18.2 pF
Turn-on Delay Time:
25 ns
Turn-off Delay Time:
35 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
AC-DC, DC-DC, DC-AC Power Supply, PFC, QR Flyback,...
Dimensions:
6 x 8 mm
more info
EPC2020 Image
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Efficient Power Conversion - EPC2020

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
1.5 to 2.2 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
470 A
Total Charge:
16 to 20 nC
Input Capacitance:
1780 to 2140 pF
Output Capacitance:
1020 to 1530 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
6.05 x 2.3 mm
more info
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Innoscience - INN700DA140C

GaN Power Transistor from Innoscience
700 V, 106 to 230 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5 x 6 mm
more info
EPC2108 Image
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Efficient Power Conversion - EPC2108

GaN Power Transistor from Efficient Power Conversion
60 to 100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 100 V
Drain Source Resistance:
150 to 3300 milli-ohm
Continous Drain Current:
0.5 to 1.7 A
Pulsed Drain Current:
0.5 to 5.5 A
Total Charge:
44 to 310 nC
Input Capacitance:
7 to 31 pF
Output Capacitance:
1.6 to 24 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC conversion, Class-D Audio, Wi...
Dimensions:
1.35 x 1.35 mm
more info
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