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GaN Power Transistors - Page 34

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 34 of 34
EPC2021 Image
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Efficient Power Conversion - EPC2021

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
1.8 to 2.2 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
390 A
Total Charge:
15 to 19 nC
Input Capacitance:
1610 to 1940 pF
Output Capacitance:
1100 to 1650 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC conversion, Motor Drive, Indu...
Dimensions:
6.05 x 2.3 mm
more info
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Innoscience - INN40W08

GaN Power Transistor from Innoscience
40 V, 9 A, Bidirection GaN Transistor

Product Specs

Configuration:
Dual
Industry:
Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
5.5 to 7.8 milli-ohm
Continous Drain Current:
9 A
Pulsed Drain Current:
15 A
Input Capacitance:
845 pF
Output Capacitance:
345 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
WLCSP
Applications:
High side load switch, OVP protection in smart pho...
Dimensions:
2 X 2 mm
more info
EPC8002 Image
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Efficient Power Conversion - EPC8002

GaN Power Transistor from Efficient Power Conversion
65 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
65 V
Drain Source Resistance:
380 to 480 milli-ohm
Continous Drain Current:
2 A
Pulsed Drain Current:
2 A
Total Charge:
133 to 167 nC
Input Capacitance:
20 to 24 pF
Output Capacitance:
6.7 to 10 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Ultra High Speed DC-DC Conversion, RF Envelope Tra...
Dimensions:
2.1 x 0.85 mm
more info
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Innoscience - INN650DA240A

GaN Power Transistor from Innoscience
650 V, 12 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
165 to 240 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
18 A
Total Charge:
21 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN 5×6
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5.55 x 12.30 x 14.40 x 18.60 mm
more info
EPC2107 Image
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Efficient Power Conversion - EPC2107

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
250 to 3300 milli-ohm
Continous Drain Current:
0.5 to 1.7 A
Pulsed Drain Current:
0.5 to 3.8 A
Total Charge:
44 to 230 nC
Input Capacitance:
7 to 25 pF
Output Capacitance:
1.6 to 21 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Class-D Audio, Wi...
Dimensions:
1.35 x 1.35 mm
more info
EPC2055 Image
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Efficient Power Conversion - EPC2055

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3 to 3.6 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
161 A
Total Charge:
6.6 to 8.5 nC
Input Capacitance:
841 to 1111 pF
Output Capacitance:
408 to 612 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
2.5 x 1.5 mm
more info
EPC2202 Image
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Efficient Power Conversion - EPC2202

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
12 to 17 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
75 A
Total Charge:
3.2 to 4 nC
Input Capacitance:
345 to 415 pF
Output Capacitance:
230 to 345 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Lidar/Pulsed Power Applications, High Power Densit...
Dimensions:
2.1 x 1.6 mm
more info
EPC2216 Image
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Efficient Power Conversion - EPC2216

GaN Power Transistor from Efficient Power Conversion
15 V GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
15 V
Drain Source Resistance:
20 to 26 milli-ohm
Continous Drain Current:
3.4 A
Pulsed Drain Current:
28 A
Total Charge:
0.87 to 1.1 nC
Input Capacitance:
98 to 118 pF
Output Capacitance:
66 to 99 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Lidar/Pulsed Power Ap...
Dimensions:
0.85 x 1.2 mm
more info
EPC2111 Image
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Efficient Power Conversion - EPC2111

GaN Power Transistor from Efficient Power Conversion
30 V GaN Enhancement Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
30 V
Drain Source Resistance:
6 to 19 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
50 to 140 A
Total Charge:
1.7 to 5.8 nC
Input Capacitance:
190 to 595 pF
Output Capacitance:
170 to 735 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Point-of-Load (POL) Converte...
Dimensions:
3.5 x 1.5 mm
more info
EPC2100 Image
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Efficient Power Conversion - EPC2100

GaN Power Transistor from Efficient Power Conversion
30 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
30 V
Drain Source Resistance:
1.5 to 8.2 milli-ohm
Continous Drain Current:
10 to 40 A
Pulsed Drain Current:
100 to 400 A
Total Charge:
3.6 to 19 nC
Input Capacitance:
395 to 1960 pF
Output Capacitance:
290 to 2060 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Point-of-Load (POL) Converte...
Dimensions:
6.05 x 2.3 mm
more info
EPC2023 Image
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Efficient Power Conversion - EPC2023

GaN Power Transistor from Efficient Power Conversion
30 V Enhancement-Mode GaN Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
30 V
Drain Source Resistance:
1.15 to 1.45 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
590 A
Total Charge:
19 to 25 nC
Input Capacitance:
2150 to 2600 pF
Output Capacitance:
1530 to 2300 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load (PO...
Dimensions:
6.05 x 2.3 mm
more info
EPC21603 Image
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Efficient Power Conversion - EPC21603

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Drain Source Voltage:
40 V
Drain Source Resistance:
90 milli-ohm
Continous Drain Current:
1.7 A
Turn-on Delay Time:
3.5 to 4.5 ns
Turn-off Delay Time:
3.1 to 4 ns
Rise Time:
0.32 to 0.50 ns
Fall Time:
0.41 to 0.60 ns
Temperature operating range:
-40 to +150 °C
Package:
BGA
Applications:
Gesture recognition, Gaming, Driver monitoring, Ro...
Dimensions:
1 x 1.5 mm
more info
EPC21601 Image
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Efficient Power Conversion - EPC21601

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Drain Source Voltage:
40 V
Drain Source Resistance:
90 milli-ohm
Continous Drain Current:
3.4 A
Turn-on Delay Time:
2.5 to 4.5 ns
Turn-off Delay Time:
2.8 to 4.6 ns
Rise Time:
0.32 to 0.50 ns
Fall Time:
0.41 to 0.60 ns
Temperature operating range:
-40 to +150 °C
Package:
BGA
Applications:
Gesture recognition, Gaming, Driver monitoring, Ro...
Dimensions:
1 x 1.5 mm
more info
EPC8004 Image
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Efficient Power Conversion - EPC8004

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement Mode Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
80 to 110 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
7.5 A
Total Charge:
370 to 450 nC
Input Capacitance:
45 to 52 pF
Output Capacitance:
23 to 34 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Ultra High Speed DC-DC Conversion, RF Envelope Tra...
Dimensions:
2.1 x 0.85 mm
more info
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