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GaN Power Transistors - Page 30

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 30 of 34
EPC2104 Image
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Efficient Power Conversion - EPC2104

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 6.8 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
180 A
Total Charge:
6.8 to 8.7 nC
Input Capacitance:
730 to 880 pF
Output Capacitance:
430 to 645 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Motor Drive
Dimensions:
6.05 x 2.3 mm
more info
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Innoscience - INN700TH140C

GaN Power Transistor from Innoscience
700 V, 106 to 230 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
IGT40R070D1 E8220 Image
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Infineon Technologies - IGT40R070D1 E8220

GaN Power Transistor from Infineon Technologies
400 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
400 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
60 A
Total Charge:
4.5 nC
Input Capacitance:
382 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
11 ns
Rise Time:
7.5 ns
Fall Time:
9 ns
Temperature operating range:
0 to +150 °C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Class-D Audio Amplifier
Dimensions:
11.67 x 9.9 mm
more info
EPC2012C Image
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Efficient Power Conversion - EPC2012C

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
70 to 100 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
22 A
Total Charge:
1 to 1.3 nC
Input Capacitance:
100 to 140 pF
Output Capacitance:
64 to 85 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC conversion, Class-D Audio, Wi...
Dimensions:
1.7 x 0.9 mm
more info
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Innoscience - INN700DC190C

GaN Power Transistor from Innoscience
700 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
5 x 6 mm
more info
IGOT60R070D1 Image
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Infineon Technologies - IGOT60R070D1

GaN Power Transistor from Infineon Technologies
600 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20-87
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
EPC2215 Image
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Efficient Power Conversion - EPC2215

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
6 to 8 milli-ohm
Continous Drain Current:
32 A
Pulsed Drain Current:
162 A
Total Charge:
13.6 to 17.7 nC
Input Capacitance:
1356 to 1790 pF
Output Capacitance:
390 to 585 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC/DC Conversion, Multi-level AC/DC...
Dimensions:
4.6 x 1.6 mm
more info
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Innoscience - INN700TH480B

GaN Power Transistor from Innoscience
700 V, 365 to 790 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
365 to 790 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
9 A
Total Charge:
1.3 nC
Input Capacitance:
43 pF
Output Capacitance:
13 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
3 ns
Rise Time:
5 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
IGO60R070D1 Image
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Infineon Technologies - IGO60R070D1

GaN Power Transistor from Infineon Technologies
600 V Enhancement mode GaN power transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20-85
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
EPC2016C Image
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Efficient Power Conversion - EPC2016C

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
12 to 16 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
75 A
Total Charge:
3.4 to 4.5 nC
Input Capacitance:
360 to 420 pF
Output Capacitance:
210 to 310 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Speed DC-DC Conversion, Class-D Audio, High F...
Dimensions:
2.1 x 1.6 mm
more info
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Innoscience - INN700TK240B

GaN Power Transistor from Innoscience
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
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Innoscience - INN700TJ350B

GaN Power Transistor from Innoscience
700 V, 270 to 580 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
270 to 580 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
10 A
Total Charge:
1.5 nC
Input Capacitance:
50 pF
Output Capacitance:
15 pF
Turn-on Delay Time:
0.9 ns
Turn-off Delay Time:
1.2 ns
Rise Time:
3.5 ns
Fall Time:
6.1 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
EPC2031 Image
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Efficient Power Conversion - EPC2031

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
2 to 2.6 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
450 A
Total Charge:
16 to 21 nC
Input Capacitance:
1640 to 2000 pF
Output Capacitance:
980 to 1500 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
4.6 x 2.6 mm
more info
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Innoscience - INN700D350B

GaN Power Transistor from Innoscience
700 V, 270 to 580 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
270 to 580 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
10 A
Total Charge:
1.5 nC
Input Capacitance:
50 pF
Output Capacitance:
15 pF
Turn-on Delay Time:
0.9 ns
Turn-off Delay Time:
1.2 ns
Rise Time:
3.5 ns
Fall Time:
6.1 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
8 x 8 mm
more info
EPC2214 Image
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Efficient Power Conversion - EPC2214

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
15 to 20 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
47 A
Total Charge:
1.8 to 2.2 nC
Input Capacitance:
198 to 238 pF
Output Capacitance:
129 to 194 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
DC-DC Conversion, Wireless Power Transfer, Lidar/P...
Dimensions:
1.35 x 1.35 mm
more info
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