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GaN Power Transistors - Page 29

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 29 of 34
EPC2019 Image
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Efficient Power Conversion - EPC2019

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
36 to 50 milli-ohm
Continous Drain Current:
8.5 A
Pulsed Drain Current:
42 A
Total Charge:
1.8 to 2.5 nC
Input Capacitance:
200 to 270 pF
Output Capacitance:
110 to 150 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Speed DC-DC conversion, Class-D Audio, High F...
Dimensions:
2.77 x 0.95 mm
more info
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Innoscience - INN700TJ190B

GaN Power Transistor from Innoscience
700 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
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Infineon Technologies - IGI60F140A1LAU MA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
EPC2059 Image
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Efficient Power Conversion - EPC2059

GaN Power Transistor from Efficient Power Conversion
170 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
170 V
Drain Source Resistance:
6.8 to 9 milli-ohm
Continous Drain Current:
24 A
Pulsed Drain Current:
102 A
Total Charge:
5.7 to 7.4 nC
Input Capacitance:
633 to 836 pF
Output Capacitance:
267 to 401 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, Sync rectification for AC/DC & D...
Dimensions:
2.8 x 1.4 mm
more info
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Innoscience - INN700TH240B

GaN Power Transistor from Innoscience
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
more info
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Infineon Technologies - IGI60F270A1LAU MA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
EPC2207 Image
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Efficient Power Conversion - EPC2207

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
15 to 22 milli-ohm
Continous Drain Current:
14 A
Pulsed Drain Current:
54 A
Total Charge:
4.5 to 5.9 nC
Input Capacitance:
454 to 600 pF
Output Capacitance:
130 to 195 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, Sync rectification for AC/DC & D...
Dimensions:
2.9 x 0.9 mm
more info
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Innoscience - INN700TK350B

GaN Power Transistor from Innoscience
700 V, 270 to 580 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
270 to 580 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
10 A
Total Charge:
1.5 nC
Input Capacitance:
50 pF
Output Capacitance:
15 pF
Turn-on Delay Time:
0.9 ns
Turn-off Delay Time:
1.2 ns
Rise Time:
3.5 ns
Fall Time:
6.1 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
IGT60R070D1 Image
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Infineon Technologies - IGT60R070D1

GaN Power Transistor from Infineon Technologies
600 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8-3
Applications:
Industrial, telecom, datacenter SMPS based on the ...
Dimensions:
11.67 x 9.9 x 2.3 mm
more info
EPC2007C Image
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Efficient Power Conversion - EPC2007C

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
24 to 30 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
40 A
Total Charge:
1.6 to 2.2 nC
Input Capacitance:
170 to 220 pF
Output Capacitance:
110 to 165 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Class-D Audio, Wi...
Dimensions:
1.7 x 1.1 mm
more info
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Innoscience - INN700TK190C

GaN Power Transistor from Innoscience
700 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
IGLD60R190D1 Image
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Infineon Technologies - IGLD60R190D1

GaN Power Transistor from Infineon Technologies
Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
190 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
13.5 to 23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
12 ns
Rise Time:
5 ns
Fall Time:
12 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8-1
Applications:
Consumer SMPS and high density chargers based on t...
more info
EPC2001C Image
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Efficient Power Conversion - EPC2001C

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
36 A
Pulsed Drain Current:
150 A
Total Charge:
7.5 to 9 nC
Input Capacitance:
770 to 900 pF
Output Capacitance:
430 to 650 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High-Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
4.1 x 1.6 mm
more info
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Innoscience - INN700TJ190C

GaN Power Transistor from Innoscience
700 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
IGLD60R070D1 Image
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Infineon Technologies - IGLD60R070D1

GaN Power Transistor from Infineon Technologies
Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R070D1 for ultimate efficiency and reliability

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8-1
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
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