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GaN Power Transistors - Page 33

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 33 of 34
INN650D080BS Image
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Innoscience - INN650D080BS

GaN Power Transistor from Innoscience
650 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
58 A
Total Charge:
60 nC
Input Capacitance:
225 pF
Output Capacitance:
70 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
5 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, BCM/DCM totem ...
Dimensions:
8 x 8 mm
more info
EPC2035 Image
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Efficient Power Conversion - EPC2035

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
35 to 45 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
24 A
Total Charge:
880 to 1150 nC
Input Capacitance:
95 to 115 pF
Output Capacitance:
60 to 90 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
INN650D190A Image
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Innoscience - INN650D190A

GaN Power Transistor from Innoscience
650 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
190 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN 8X8
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
Dimensions:
8 x 8 mm
more info
EPC2014C Image
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Efficient Power Conversion - EPC2014C

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
12 to 16 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
60 A
Total Charge:
2 to 2.5 nC
Input Capacitance:
220 to 300 pF
Output Capacitance:
150 to 210 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC conversion, Class-D Audio, Wi...
Dimensions:
1.7 x 1.1 mm
more info
INN040W048A Image
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Innoscience - INN040W048A

GaN Power Transistor from Innoscience
40 V GaN-on-Si HEMT for Over-Voltage Protection Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
4.8 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
100 A
Total Charge:
15.8 nC
Input Capacitance:
886.5 pF
Output Capacitance:
381.2 pF
Temperature operating range:
-40 to 125 degree C
Package Type:
Surface Mount
Package:
WLCSP
Applications:
High side load switch, OVP protection in smart pho...
Dimensions:
2.1 x 2.1 mm
more info
EPC2015C Image
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Efficient Power Conversion - EPC2015C

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.2 to 4 milli-ohm
Continous Drain Current:
53 A
Pulsed Drain Current:
235 A
Total Charge:
8.7 to 11.2 nC
Input Capacitance:
980 to 1180 pF
Output Capacitance:
710 to 1070 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
4.1 x 1.6 mm
more info
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Innoscience - INN650D240A

GaN Power Transistor from Innoscience
650 V, 12 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
165 to 240 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
18 A
Total Charge:
21 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN 8X8
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
332 x 6.10 x 22.60 x 18.40 mm
more info
EPC8009 Image
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Efficient Power Conversion - EPC8009

GaN Power Transistor from Efficient Power Conversion
65 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
65 V
Drain Source Resistance:
90 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
7.5 A
Total Charge:
370 to 450 nC
Input Capacitance:
45 to 52 pF
Output Capacitance:
19 to 28 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Ultra High Speed DC-DC Conversion, RF Envelope Tra...
Dimensions:
2.1 x 0.85 mm
more info
INN650D140A Image
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Innoscience - INN650D140A

GaN Power Transistor from Innoscience
Enhancement Mode GaN-on-Si Power Transistor for Fast Charging Applications

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
140 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
33 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 155 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN 8X8
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
8 x 8 mm
more info
EPC2103 Image
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Efficient Power Conversion - EPC2103

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
4 to 5.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
195 A
Total Charge:
6.5 to 8 nC
Input Capacitance:
730 to 880 pF
Output Capacitance:
445 to 790 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Motor Drive
Dimensions:
6.05 x 2.3 mm
more info
INN650DA500A Image
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Innoscience - INN650DA500A

GaN Power Transistor from Innoscience
650 V Enhancement Mode GaN-on-Si Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
365 milli-ohm
Continous Drain Current:
7 A
Pulsed Drain Current:
9 A
Total Charge:
10.5 nC
Input Capacitance:
43 pF
Output Capacitance:
13 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
3 ns
Rise Time:
5 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN 5X6
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
8 x 8 mm
more info
EPC2105 Image
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Efficient Power Conversion - EPC2105

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
2.4 to 14.5 milli-ohm
Continous Drain Current:
10 to 40 A
Pulsed Drain Current:
70 to 300 A
Total Charge:
2.7 to 15 nC
Input Capacitance:
300 to 1410 pF
Output Capacitance:
170 to 1170 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC
Dimensions:
6.05 x 2.3 mm
more info
INN650DA140A Image
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Innoscience - INN650DA140A

GaN Power Transistor from Innoscience
650 V GaN Enhancement Mode Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN 5X6
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5 x 6 x 0.9 mm
more info
EPC2029 Image
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Efficient Power Conversion - EPC2029

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
2.5 to 3.2 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
360 A
Total Charge:
13 to 16 nC
Input Capacitance:
1410 to 1690 pF
Output Capacitance:
820 to 1230 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC conversion, Motor Drive, Indu...
Dimensions:
4.6 x 2.6 mm
more info
INN150LA070A Image
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Innoscience - INN150LA070A

GaN Power Transistor from Innoscience
150 V Enhancement Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
7 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
28 A
Total Charge:
7.6 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LGA
Applications:
Synchronous rectification, Class-D audio, High fre...
Dimensions:
3.2 x 2.2 mm
more info
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