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GaN Power Transistors - Page 28

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 28 of 34
EPC2040 Image
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Efficient Power Conversion - EPC2040

GaN Power Transistor from Efficient Power Conversion
15 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
15 V
Drain Source Resistance:
24 to 30 milli-ohm
Continous Drain Current:
3.4 A
Pulsed Drain Current:
28 A
Total Charge:
0.745 to 0.925 nC
Input Capacitance:
86 to 105 pF
Output Capacitance:
67 to 100 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
DC-DC Converters, Pulsed Laser Driver, LiDAR/Pulse...
Dimensions:
0.85 x 1.2 mm
more info
FBG04N30B Image
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EPC Space - FBG04N30B

GaN Power Transistor from EPC Space
40 V Radiation Hard eGaN Power Switching HEMT

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
5 to 8.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.9 to 11.4 nC
Input Capacitance:
1100 to 1300 pF
Output Capacitance:
650 to 900 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
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Innoscience - INN700DC240A

GaN Power Transistor from Innoscience
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
5 x 6 mm
more info
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Infineon Technologies - IGI60L5050A1M

GaN Power Transistor from Infineon Technologies
600 V, 500 to 1000 milli-ohm GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
500 to 1000 milli-ohm
Continous Drain Current:
3.9 A
Pulsed Drain Current:
6.4 A
Total Charge:
0.58 nC
Input Capacitance:
37.8 pF
Output Capacitance:
7.2 pF
Turn-on Delay Time:
110 ns
Turn-off Delay Time:
110 ns
Rise Time:
170 ns
Fall Time:
90 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Low power motor drives, Low power SMPS
more info
EPC2010C Image
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Efficient Power Conversion - EPC2010C

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
18 to 25 milli-ohm
Continous Drain Current:
22 A
Pulsed Drain Current:
90 A
Total Charge:
3.7 to 5.3 nC
Input Capacitance:
380 to 540 pF
Output Capacitance:
240 to 320 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Speed DC-DC conversion, Class-D Audio, Lidar
Dimensions:
3.6 x 1.6 mm
more info
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Infineon Technologies - IGLR60R190D1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
12.8 A
Pulsed Drain Current:
23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
16 ns
Turn-off Delay Time:
13 ns
Rise Time:
12 ns
Fall Time:
14 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
EPC2052 Image
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Efficient Power Conversion - EPC2052

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
100 V
Drain Source Resistance:
10 milli-ohm
Continous Drain Current:
8.2 A
Pulsed Drain Current:
74 A
Total Charge:
3.5 to 4.5 nC
Input Capacitance:
441 to 584 pF
Output Capacitance:
195 to 293 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
48 V Servers, Lidar/Pulsed Power, Isolated Power S...
Dimensions:
1.5 x 1.5 mm
more info
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Innoscience - INN700D240C

GaN Power Transistor from Innoscience
700 V, 165 to 360 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGLD60R190D1S

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
8 ns
Rise Time:
6 ns
Fall Time:
14 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
more info
EPC2032 Image
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Efficient Power Conversion - EPC2032

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3 to 4 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High-Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
4.6 x 2.6 mm
more info
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Innoscience - INN700TH190B

GaN Power Transistor from Innoscience
700 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter...
more info
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Infineon Technologies - IGT60R042D1

GaN Power Transistor from Infineon Technologies
600 V, 33 to 64 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
33 to 64 milli-ohm
Continous Drain Current:
23 A
Pulsed Drain Current:
90 A
Total Charge:
8.8 nC
Input Capacitance:
649 pF
Output Capacitance:
97 pF
Turn-on Delay Time:
13 ns
Turn-off Delay Time:
19 ns
Rise Time:
8 ns
Fall Time:
11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
EPC2022 Image
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Efficient Power Conversion - EPC2022

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.2 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
390 A
Total Charge:
13 to 16 nC
Input Capacitance:
1400 to 1690 pF
Output Capacitance:
840 to 1260 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High-Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
6.05 x 2.3 mm
more info
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Innoscience - INN700D140C

GaN Power Transistor from Innoscience
700 V, 106 to 230 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, Totem pole PFC...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGI60F5050A1L AUMA1

GaN Power Transistor from Infineon Technologies
600 V, 500 to 1000 milli-ohm GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
500 to 1000 milli-ohm
Continous Drain Current:
3.8 A
Pulsed Drain Current:
6.4 A
Total Charge:
0.58 nC
Input Capacitance:
37.8 pF
Output Capacitance:
7.2 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Low power motor drive, LED lighting
Dimensions:
8 x 8 mm
more info
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