1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Power Transistors

GaN Power Transistors - Page 12

509 GaN Power Transistors from 22 manufacturers meet your specification.
Filters (0)
509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 12 of 34
Download Datasheet  Request Quote  Product Details

Nexperia - GAN080-650EBE

GaN Power Transistor from Nexperia
650 V, 60 to 135 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 to 135 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
58 A
Total Charge:
6.2 nC
Input Capacitance:
225 pF
Output Capacitance:
70 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
5 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 x 0.9 mm
more info
EPC2044 Image
Download Datasheet  Request Quote  Product Details

Efficient Power Conversion - EPC2044

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
7 to 10.5 milli-ohm
Continous Drain Current:
9.4 A
Pulsed Drain Current:
89 A
Total Charge:
5.5 nC
Input Capacitance:
664 pF
Output Capacitance:
294 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
48 V Servers, Lidar/Pulsed Power, Isolated Power S...
Dimensions:
2.15 x 1.25 mm
more info
Download Datasheet  Request Quote  Product Details

EPC Space - CDA04N08X2S

GaN Power Transistor from EPC Space
40 V, 8 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
13 to 16 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.8 nC
Input Capacitance:
312 pF
Output Capacitance:
270 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.7 mm
more info
INN150EQ032A Image
Download Datasheet  Request Quote  Product Details

Innoscience - INN150EQ032A

GaN Power Transistor from Innoscience
150 V Enhancement-mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
3.2 to 3.9 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
260 A
Total Charge:
20 nC
Input Capacitance:
2200 pF
Output Capacitance:
900 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
En-FCQFN
Applications:
High frequency DC-DC converter, Solar Systems opti...
Dimensions:
4 x 6 mm
more info
NV6169 Image
Download Datasheet  Request Quote  Product Details

Navitas Semiconductor - NV6169

GaN Power Transistor from Navitas Semiconductor
650 V GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
45 to 55 milli-ohm
Continous Drain Current:
24 A
Pulsed Drain Current:
66 A
Total Charge:
75 nC
Output Capacitance:
96 pF
Turn-on Delay Time:
22 ns
Turn-off Delay Time:
13 ns
Rise Time:
6 ns
Fall Time:
14 ns
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PQFN 8 x 8
Applications:
AC-DC, DC-DC, ACF, Buck, Boost, Half Bridge, Full ...
Dimensions:
8.0 x 8.0 mm
more info
ISL73023SEH Image
Download Datasheet  Request Quote  Product Details

Renesas - ISL73023SEH

GaN Power Transistor from Renesas
100 V Rad-Hard GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Download Datasheet  Request Quote  Product Details

Central Semiconductor - CCSPG0420N

GaN Power Transistor from Central Semiconductor
40 V, 20 A, GaN Transistor

Product Specs

Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
4 to 4.8 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
100 A
Total Charge:
15.8 nC
Input Capacitance:
886.5 pF
Output Capacitance:
381.2 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CSP2X2
more info
CGD65A130S2 Image
Download Datasheet  Request Quote  Product Details

Cambridge GaN Devices - CGD65A130S2

GaN Power Transistor from Cambridge GaN Devices
650 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
2.3 nC
Output Capacitance:
25 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
20 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Server power and data centres, Telecom rectifiers,...
Dimensions:
8 x 8 mm
more info
Download Datasheet  Request Quote  Product Details

Ancora Semiconductor - FET-E6015PB020

GaN Power Transistor from Ancora Semiconductor
650 V, 122 to 302 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
122 to 302 milli-ohm
Continous Drain Current:
6.6 to 14.7 A
Pulsed Drain Current:
20.7 to 46.3 A
Total Charge:
2.65 nC
Input Capacitance:
111.84 pF
Output Capacitance:
19.05 pF
Turn-on Delay Time:
1.88 ns
Turn-off Delay Time:
6.7 ns
Rise Time:
3.16 ns
Fall Time:
5.39 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Download Datasheet  Request Quote  Product Details

Solid State Devices - SGF48N20M

GaN Power Transistor from Solid State Devices
200 V, 11 to 16 milli-ohm, 40 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
11 to 16 milli-ohm
Continous Drain Current:
40 A
Pulsed Drain Current:
200 A
Total Charge:
9 to 11 nC
Input Capacitance:
950 to 1140 pF
Output Capacitance:
450 to 680 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Download Datasheet  Request Quote  Product Details

Xindao Electronic Technology - PGC8FN65R110A

GaN Power Transistor from Xindao Electronic Technology
650 V, 110 to 230 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
110 to 230 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
35 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
Download Datasheet  Request Quote  Product Details

GaNPower International - GPI4TIC10DFV

GaN Power Transistor from GaNPower International
900 V, 120 to 140 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
900 V
Drain Source Resistance:
120 to 140 milli-ohm
Continous Drain Current:
10 A
Turn-on Delay Time:
14 ns
Turn-off Delay Time:
18 ns
Rise Time:
10 ns
Fall Time:
16 ns
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN6x8
Applications:
Switching Power, Power adapters, Power Delivery Ch...
more info
IGC033S10S1Q Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IGC033S10S1Q

GaN Power Transistor from Infineon Technologies
100 V Automotive-Grade E-mode Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial, Automotive
Gate Threshold Voltage:
1.2 to 2.9 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.3 milli-ohm
Continous Drain Current:
21 to 76 A
Pulsed Drain Current:
330 to 700 A
Total Charge:
11 to 14 nC
Input Capacitance:
1200 to 1400 pF
Output Capacitance:
540 to 590 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-6
Applications:
Automotive DC/DC, Drives, Class D Audio, USB-PD
Dimensions:
3.0 x 5.0 mm
more info
Download Datasheet  Request Quote  Product Details

Nexperia - GAN140-650FBE

GaN Power Transistor from Nexperia
650 V, 106 to 230 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060-5
Applications:
High power density and high efficiency power conve...
Dimensions:
5.6 x 0.9 mm
more info
Download Datasheet  Request Quote  Product Details

Efficient Power Conversion - EPC2054

GaN Power Transistor from Efficient Power Conversion
200 V, 32 to 43 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
32 to 43 milli-ohm
Continous Drain Current:
3 A
Pulsed Drain Current:
32 A
Total Charge:
4.3 nC
Input Capacitance:
573 pF
Output Capacitance:
134 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
1.3 x 1.3 mm
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Configuration

Industry

Gate Threshold Voltage

Apply

Drain Source Voltage

Apply

Drain Source Resistance

Apply

Continous Drain Current

Apply

Pulsed Drain Current

Apply

Total Charge

Apply

Qualification

RoHS Compliant

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.