1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Power Transistors

GaN Power Transistors - Page 10

509 GaN Power Transistors from 22 manufacturers meet your specification.
Filters (0)
509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 10 of 34
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IGL65R080D2

GaN Power Transistor from Infineon Technologies
650 V, 18 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
80 to 170 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
-42 to 42 A
Total Charge:
3.3 nC
Input Capacitance:
240 pF
Output Capacitance:
40 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
11 ns
Rise Time:
8 ns
Fall Time:
17 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS based on half-bridge hard...
more info
Download Datasheet  Request Quote  Product Details

Nexperia - GAN7R0-150LBE

GaN Power Transistor from Nexperia
150 V, 5.6 to 7 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 12.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
120 A
Total Charge:
7.6 nC
Input Capacitance:
865 pF
Output Capacitance:
280 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SOT8073-1
Applications:
High power density and high efficiency power conve...
Dimensions:
3.2 x 2.2 x 0.774 mm
more info
EPC2234 Image
Download Datasheet  Request Quote  Product Details

Efficient Power Conversion - EPC2234

GaN Power Transistor from Efficient Power Conversion
160 V Automotive-Grade Enhancement Mode Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
160 V
Drain Source Resistance:
6 to 8 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
213 A
Total Charge:
13.8 nC
Input Capacitance:
1386 pF
Output Capacitance:
962 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High Frequency DC/DC Conversion, Wireless Power, C...
Dimensions:
4.6 x 2.6 mm
more info
TP44200NM Image
Download Datasheet  Request Quote  Product Details

Tagore Technology - TP44200NM

GaN Power Transistor from Tagore Technology
650 V GaN HEMT for Charging Applications

Product Specs

Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 milli-ohm
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN-22
Applications:
AC-DC Converters, Half Bridge topologies, LED ligh...
Dimensions:
5 x 7 x 0.8 mm
more info
Download Datasheet  Request Quote  Product Details

EPC Space - CDA04N30X1S

GaN Power Transistor from EPC Space
40 V, 30 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.2 to 4 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
100 A
Total Charge:
11.4 nC
Input Capacitance:
1300 pF
Output Capacitance:
800 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
4.8 x 2.2 mm
more info
NV6514C Image
Download Datasheet  Request Quote  Product Details

Navitas Semiconductor - NV6514C

GaN Power Transistor from Navitas Semiconductor
650 V Automotive-Grade GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
18 to 43 milli-ohm
Continous Drain Current:
57 to 90 A
Pulsed Drain Current:
80 to 175 A
Output Capacitance:
143 pF
Turn-on Delay Time:
25 to 41 ns
Turn-off Delay Time:
10 to 19 ns
Rise Time:
8 ns
Fall Time:
11 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
ISL73020SEH Image
Download Datasheet  Request Quote  Product Details

Renesas - ISL73020SEH

GaN Power Transistor from Renesas
40 V Radiation-Hard GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
GNE1040TB Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - GNE1040TB

GaN Power Transistor from ROHM Semiconductor
150 V N-Channel Enhancement Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
8 V
Drain Source Voltage:
150 V
Drain Source Resistance:
40 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
50 A
Total Charge:
2 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Half Bridge topologies, Synchronous Buck or Boost,...
Dimensions:
5.0 x 6.0 x 1.0 mm
more info
Download Datasheet  Request Quote  Product Details

Teledyne e2v HiRel Electronics - TDG650E30BEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 50 to 150 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 150 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.3 ns
Turn-off Delay Time:
8.2 ns
Rise Time:
4.9 ns
Fall Time:
5.2 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.1 x 8.5 x 0.56 mm
more info
Download Datasheet  Request Quote  Product Details

Central Semiconductor - CDFG6517N

GaN Power Transistor from Central Semiconductor
650 V, 17 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 140 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8X8
Applications:
High voltage, Soft switching applications
more info
Download Datasheet  Request Quote  Product Details

Cambridge GaN Devices - CGD65B130S2

GaN Power Transistor from Cambridge GaN Devices
650 V, 130 to 350 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
2.3 nC
Output Capacitance:
25 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
20 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Server power ...
Dimensions:
5 x 6 mm
more info
WI62120T Image
Download Datasheet  Request Quote  Product Details

Wise-integration - WI62120T

GaN Power Transistor from Wise-integration
650 V Enhancement Mode GaN-on-Si Power IC

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
113 milli-ohm
Continous Drain Current:
13 A
Total Charge:
2.75 nC
Input Capacitance:
96.8 pF
Output Capacitance:
21.9 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
Download Datasheet  Request Quote  Product Details

Ancora Semiconductor - FET-E6007PB020

GaN Power Transistor from Ancora Semiconductor
650 V, 64 to 162.5 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
64 to 162.5 milli-ohm
Continous Drain Current:
8.4 to 18.7 A
Pulsed Drain Current:
26.4 to 59.1 A
Total Charge:
5.56 nC
Input Capacitance:
198.8 pF
Output Capacitance:
49.9 pF
Turn-on Delay Time:
2.84 ns
Turn-off Delay Time:
10.44 ns
Rise Time:
4.06 ns
Fall Time:
5.76 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Download Datasheet  Request Quote  Product Details

Solid State Devices - SGF15E100JUB

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Download Datasheet  Request Quote  Product Details

Xindao Electronic Technology - PGCDPD65R600A

GaN Power Transistor from Xindao Electronic Technology
650 V, 600 to 1260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.5 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
600 to 1260 milli-ohm
Continous Drain Current:
4.8 A
Pulsed Drain Current:
14 A
Total Charge:
7 nC
Input Capacitance:
243 pF
Output Capacitance:
5.3 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
7 ns
Rise Time:
15 ns
Fall Time:
14 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Configuration

Industry

Gate Threshold Voltage

Apply

Drain Source Voltage

Apply

Drain Source Resistance

Apply

Continous Drain Current

Apply

Pulsed Drain Current

Apply

Total Charge

Apply

Qualification

RoHS Compliant

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.