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GaN Power Transistors - Page 11

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 11 of 34
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GaNPower International - GPIHI10ICDF68

GaN Power Transistor from GaNPower International
900 V, 120 to 130 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
900 V
Drain Source Resistance:
120 to 130 milli-ohm
Continous Drain Current:
10 A
Turn-on Delay Time:
20 ns
Turn-off Delay Time:
29 ns
Rise Time:
50 ns
Fall Time:
29 ns
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN6x8
Applications:
High-side switch in switching power, Power adapter...
more info
IGL65R110D2 Image
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Infineon Technologies - IGL65R110D2

GaN Power Transistor from Infineon Technologies
650 V Enhancement Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
110 to 240 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
-30 to 30 A
Total Charge:
2.4 nC
Input Capacitance:
170 pF
Output Capacitance:
29 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
10 ns
Rise Time:
7 ns
Fall Time:
20 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS based on half-bridge hard...
more info
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Nexperia - GAN190-650EBE

GaN Power Transistor from Nexperia
650 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 x 0.9 mm
more info
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Efficient Power Conversion - EPC2088

GaN Power Transistor from Efficient Power Conversion
100 V, 2.4 to 3.2 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
231 A
Total Charge:
17.8 nC
Input Capacitance:
2703 pF
Output Capacitance:
659 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, BLDC Motor Drives, Sync Rectific...
Dimensions:
3.5 x 1.95 mm
more info
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Innoscience - ISG6109QA

GaN Power Transistor from Innoscience
-7 to 700 V, 320 to 450 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
-7 to 700 V
Drain Source Resistance:
320 to 450 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
8 A
Output Capacitance:
13.7 pF
Turn-on Delay Time:
25 ns
Turn-off Delay Time:
35 ns
Rise Time:
10 ns
Fall Time:
10 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN6x8-30L
Applications:
AC-DC, DC-DC, DC-AC Power Supply, PFC, QR Flyback,...
more info
NV6511 Image
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Navitas Semiconductor - NV6511

GaN Power Transistor from Navitas Semiconductor
Automotive-Qualified GaN Power Stage IC

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
70 to 168 milli-ohm
Continous Drain Current:
15 to 23 A
Pulsed Drain Current:
19 to 42 A
Output Capacitance:
49 pF
Turn-on Delay Time:
22 to 32 ns
Turn-off Delay Time:
5 to 11 ns
Rise Time:
8 ns
Fall Time:
6.5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
ISL70020SEHML Image
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Renesas - ISL70020SEHML

GaN Power Transistor from Renesas
40 V Radiation-Tolerant Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.5 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9 x 4.7 mm
more info
GNE1015TB Image
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ROHM Semiconductor - GNE1015TB

GaN Power Transistor from ROHM Semiconductor
150 V, 55 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
8 V
Drain Source Voltage:
150 V
Drain Source Resistance:
15 milli-ohm
Continous Drain Current:
55 A
Total Charge:
4.9 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Dimensions:
5.0 x 6.0 x 1.0 mm
more info
TDG650E15BEP Image
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Teledyne e2v HiRel Electronics - TDG650E15BEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
5 x 6.6 x 0.51 mm
more info
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Central Semiconductor - CDFG6511N

GaN Power Transistor from Central Semiconductor
650 V, 11.5 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 190 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8X8
Applications:
High voltage, Soft switching applications
more info
CGD65A055SH2 Image
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Cambridge GaN Devices - CGD65A055SH2

GaN Power Transistor from Cambridge GaN Devices
600 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
20 V
Drain Source Voltage:
650 V
Drain Source Resistance:
55 milli-ohm
Continous Drain Current:
27 A
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS, and Inverters, AC/DC and DC...
Dimensions:
8 x 8 mm
more info
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Solid State Devices - SGF30E100Z8

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254Z
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGH8N65R160A

GaN Power Transistor from Xindao Electronic Technology
650 V, 160 to 330 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.8 to 3.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 330 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
17 A
Total Charge:
2.2 nC
Input Capacitance:
66 pF
Output Capacitance:
26 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
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GaNPower International - GP120R60T4

GaN Power Transistor from GaNPower International
1100 V, 42 to 60 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.5 to 4 V
Drain Source Voltage:
1100 V
Drain Source Resistance:
42 to 60 milli-ohm
Continous Drain Current:
30 A
Total Charge:
8.25 nC
Input Capacitance:
236 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
34 ns
Turn-off Delay Time:
33 ns
Rise Time:
26 ns
Fall Time:
20 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO247-4
Applications:
Switching Power Applications, Server and Telecom P...
more info
IGB110S10S1Q Image
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Infineon Technologies - IGB110S10S1Q

GaN Power Transistor from Infineon Technologies
100 V Automotive-Grade GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial, Automotive
Gate Threshold Voltage:
1.2 to 2.9 V
Drain Source Voltage:
100 V
Drain Source Resistance:
9.4 to 11 milli-ohm
Continous Drain Current:
9.0 to 23 A
Pulsed Drain Current:
97 to 210 A
Total Charge:
3.4 to 4.4 nC
Input Capacitance:
300 to 340 pF
Output Capacitance:
140 to 150 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-4
Applications:
Automotive DC/DC, Drives, Class D Audio, USB-PD
Dimensions:
3.0 x 3.0 mm
more info
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