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GaN Power Transistors - Page 9

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 9 of 34
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Tagore Technology - TP44400SGTRPBF

GaN Power Transistor from Tagore Technology
650 V, 360 to 880 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, PFC and inverter a...
Dimensions:
5.7 x 0.8 mm
more info
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EPC Space - CDA20N18X3S

GaN Power Transistor from EPC Space
200 V, 18 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
18 to 25 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
6 nC
Input Capacitance:
900 pF
Output Capacitance:
359 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
4.2 x 2.2 mm
more info
SGT120R65AL Image
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STMicroelectronics - SGT120R65AL

GaN Power Transistor from STMicroelectronics
650 V Enhancement Mode GaN Power Transistor

Product Specs

Gate Threshold Voltage:
1.2 to 2.6 V
Drain Source Voltage:
650 to 750 V
Drain Source Resistance:
75 to 185 milli-ohm
Continous Drain Current:
9 to 15 A
Pulsed Drain Current:
36 A
Total Charge:
3 nC
Input Capacitance:
125 pF
Output Capacitance:
50 pF
Turn-on Delay Time:
4.1 ns
Turn-off Delay Time:
8.9 ns
Rise Time:
6 ns
Fall Time:
9.7 ns
Package Type:
Surface Mount
Applications:
USB-C PD Quick Chargers & Adaptors, Power adapters...
Dimensions:
6.6 x 5.3 x 1 mm
more info
INN100EQ016A Image
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Innoscience - INN100EQ016A

GaN Power Transistor from Innoscience
100 V Enhancement-mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1.4 to 1.8 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
320 A
Total Charge:
22 nC
Input Capacitance:
2500 pF
Output Capacitance:
1100 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
En-FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
4 x 6 mm
more info
NV6522 Image
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Navitas Semiconductor - NV6522

GaN Power Transistor from Navitas Semiconductor
18 V Automotive-Grade GaN Power IC

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
40 to 94 milli-ohm
Continous Drain Current:
26 to 41 A
Pulsed Drain Current:
38 to 83 A
Output Capacitance:
74 pF
Turn-on Delay Time:
24 to 35 ns
Turn-off Delay Time:
7 to 13 ns
Rise Time:
8 ns
Fall Time:
7 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLT-16L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
ISL70023SEHML Image
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Renesas - ISL70023SEHML

GaN Power Transistor from Renesas
100 V Radiation Hard GaN Power Transistor for Relay Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
Qualification:
MIL-PRF-38535
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9.0 x 4.7 mm
more info
GNE1007TB Image
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ROHM Semiconductor - GNE1007TB

GaN Power Transistor from ROHM Semiconductor
150 V, 80 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
8 V
Drain Source Voltage:
150 V
Drain Source Resistance:
7 milli-ohm
Continous Drain Current:
80 A
Total Charge:
10.2 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Dimensions:
5.0 x 6.0 x 1.0 mm
more info
TDG650E60BEP Image
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Teledyne e2v HiRel Electronics - TDG650E60BEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
PCB Mount
Applications:
High efficiency power conversion, High density pow...
Dimensions:
11.00 x 9.02 mm
more info
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Central Semiconductor - CDF56G6517N

GaN Power Transistor from Central Semiconductor
650 V, 17 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 140 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5X6A
Applications:
High voltage, Soft switching applications
more info
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Cambridge GaN Devices - CGD65B240SH2

GaN Power Transistor from Cambridge GaN Devices
650 V, 240 to 640 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
240 to 640 milli-ohm
Continous Drain Current:
7 A
Total Charge:
1.2 nC
Output Capacitance:
11 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
13 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
5 x 6 mm
more info
WI61195T Image
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Wise-integration - WI61195T

GaN Power Transistor from Wise-integration
750 V E-Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
8 A
Total Charge:
2.75 nC
Input Capacitance:
96.8 pF
Output Capacitance:
21.9 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
8 x 8 mm
more info
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Ancora Semiconductor - FET-E6015PB010

GaN Power Transistor from Ancora Semiconductor
650 V, 122 to 302 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
122 to 302 milli-ohm
Continous Drain Current:
6.6 to 14 A
Pulsed Drain Current:
20.7 to 46.3 A
Total Charge:
2.65 nC
Input Capacitance:
111.84 pF
Output Capacitance:
19.05 pF
Turn-on Delay Time:
1.88 ns
Turn-off Delay Time:
6.7 ns
Rise Time:
3.16 ns
Fall Time:
5.39 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
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Solid State Devices - SGF48N10MUB

GaN Power Transistor from Solid State Devices
100 V, 8 to 10 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGCTOF65R600A

GaN Power Transistor from Xindao Electronic Technology
650 V, 600 to 1260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
600 to 1260 milli-ohm
Continous Drain Current:
4.8 A
Pulsed Drain Current:
8 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
GPI120R12T74IC Image
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GaNPower International - GPI120R12T74IC

GaN Power Transistor from GaNPower International
1200 V N-channel GaN Power Transistor for Power Adapter Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
1200 V
Drain Source Resistance:
18 milli-ohm
Continous Drain Current:
120 A
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
25 ns
Rise Time:
30 ns
Fall Time:
80 ns
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO247-4
Applications:
Switching Power, Power adapters, Power Delivery Ch...
Dimensions:
15.70 x 40.64 mm
more info
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