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GaN Power Transistors - Page 8

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 8 of 34
INN100W800A-Q Image
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Innoscience - INN100W800A-Q

GaN Power Transistor from Innoscience
100 V Automotive-Qualified E-Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Automotive
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
80 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
17 A
Total Charge:
0.75 nC
Input Capacitance:
85 pF
Output Capacitance:
41 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
Package Type:
wafer
Package:
WLCSP
Applications:
LiDAR Application, High Power Density DC-DC Conver...
Dimensions:
0.9 x 0.9 mm
more info
NV6525 Image
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Navitas Semiconductor - NV6525

GaN Power Transistor from Navitas Semiconductor
Automotive-Grade GaN Power IC

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
25 to 60 milli-ohm
Continous Drain Current:
41 to 65 A
Pulsed Drain Current:
57 to 125 A
Output Capacitance:
108 pF
Turn-on Delay Time:
25 to 36 ns
Turn-off Delay Time:
8 to 17 ns
Rise Time:
8 ns
Fall Time:
9 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLT-16L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
ISL70024SEH Image
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Renesas - ISL70024SEH

GaN Power Transistor from Renesas
200 V Rad-Hard GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 to 110 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
2766µm x 950µm (108.90 mils x 37.40 mils) Thicknes...
more info
GNP1070TC-Z Image
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ROHM Semiconductor - GNP1070TC-Z

GaN Power Transistor from ROHM Semiconductor
650 V Enhancement Mode GaN Power Transistor

Product Specs

Gate Threshold Voltage:
1.45 V
Drain Source Voltage:
650 V
Drain Source Resistance:
73 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
66 A
Total Charge:
5.2 nC
Input Capacitance:
200 pF
Output Capacitance:
50 pF
Turn-on Delay Time:
5.9 ns
Turn-off Delay Time:
8 ns
Rise Time:
6.9 ns
Fall Time:
8.7 ns
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
High switching frequency converter, High density c...
Dimensions:
8.0 x 8.0 x 0.9 mm
more info
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Teledyne e2v HiRel Electronics - TDG650E15BEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 100 to 258 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
5 x 6.6 x 0.51 mm
more info
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Central Semiconductor - CDF56G6511N

GaN Power Transistor from Central Semiconductor
650 V, 11.5 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 190 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5X6A
Applications:
High voltage, Soft switching applications
more info
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Cambridge GaN Devices - CGD65A130SH2

GaN Power Transistor from Cambridge GaN Devices
650 V, 130 to 350 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
1.9 nC
Output Capacitance:
24 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
8 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
8 x 8 mm
more info
WI61195TR Image
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Wise-integration - WI61195TR

GaN Power Transistor from Wise-integration
650 V Enhancement Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
8 A
Total Charge:
2.75 nC
Input Capacitance:
96.8 pF
Output Capacitance:
21.9 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
8 x 8 mm
more info
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Ancora Semiconductor - FET-E6007PD020

GaN Power Transistor from Ancora Semiconductor
650 V, 56 to 120 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
56 to 120 milli-ohm
Continous Drain Current:
17.1 to 38.3 A
Pulsed Drain Current:
54.4 to 121.6 A
Total Charge:
5.02 nC
Input Capacitance:
155.3 pF
Output Capacitance:
38.3 pF
Turn-on Delay Time:
3.36 ns
Turn-off Delay Time:
8.76 ns
Rise Time:
3.9 ns
Fall Time:
5.6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
SGF15D100J Image
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Solid State Devices - SGF15D100J

GaN Power Transistor from Solid State Devices
1000 V Depletion Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
-12 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
140 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
30 nC
Input Capacitance:
135 pF
Output Capacitance:
44 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
Dimensions:
1.760 x 0.420 inches
more info
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Xindao Electronic Technology - PGH8FN65R160A

GaN Power Transistor from Xindao Electronic Technology
650 V, 160 to 330 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.8 to 3.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 330 milli-ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
17 A
Total Charge:
2.2 nC
Input Capacitance:
66 pF
Output Capacitance:
26 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
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GaNPower International - GPI65R12T74IC

GaN Power Transistor from GaNPower International
650 V, 12 to 30 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
12 to 30 milli-ohm
Continous Drain Current:
120 A
Turn-on Delay Time:
14 ns
Turn-off Delay Time:
18 ns
Rise Time:
10 ns
Fall Time:
16 ns
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO247-4
Applications:
Switching Power, Power adapters, Power Delivery Ch...
more info
IGL65R055D2 Image
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Infineon Technologies - IGL65R055D2

GaN Power Transistor from Infineon Technologies
650 V Automotive-Grade E-Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
55 to 120 milli-ohm
Continous Drain Current:
22 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
4.7 nC
Input Capacitance:
340 pF
Output Capacitance:
57 pF
Turn-on Delay Time:
9 ns
Turn-off Delay Time:
12 ns
Rise Time:
8 ns
Fall Time:
14 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS based on half-bridge hard...
more info
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Nexperia - GAN190-650FBE

GaN Power Transistor from Nexperia
650 V, 138 to 300 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060-5
Applications:
High power density and high efficiency power conve...
Dimensions:
5 x 6 x 0.9 mm
more info
EPC2934C Image
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Efficient Power Conversion - EPC2934C

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement Mode Power Transistor for Class-D Audio Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
6 to 8 milli-ohm
Continous Drain Current:
39 A
Pulsed Drain Current:
213 A
Total Charge:
13.8 nC
Input Capacitance:
1386 pF
Output Capacitance:
962 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High Speed DC-DC Conversion, Motor Drive, Industri...
Dimensions:
4.6 x 2.6 mm
more info
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