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GaN Power Transistors - Page 7

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 7 of 34
NV6515 Image
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Navitas Semiconductor - NV6515

GaN Power Transistor from Navitas Semiconductor
Automotive-Grade GaN Power Stage IC

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
25 to 60 milli-ohm
Continous Drain Current:
41 to 65 A
Pulsed Drain Current:
57 to 125 A
Output Capacitance:
108 pF
Turn-on Delay Time:
25 to 36 ns
Turn-off Delay Time:
8 to 17 ns
Rise Time:
8 ns
Fall Time:
9 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
ISL70024SEHML Image
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Renesas - ISL70024SEHML

GaN Power Transistor from Renesas
200 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
Qualification:
MIL-PRF-38535
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9 x 4.7 x 1.82 mm
more info
GNP1150TCA-Z Image
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ROHM Semiconductor - GNP1150TCA-Z

GaN Power Transistor from ROHM Semiconductor
650 V Enhancement Mode GaN Field Effect Transistor

Product Specs

Gate Threshold Voltage:
1.45 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
35 A
Total Charge:
2.7 nC
Input Capacitance:
112 pF
Output Capacitance:
19 pF
Turn-on Delay Time:
4.7 ns
Turn-off Delay Time:
6.2 ns
Rise Time:
5.3 ns
Fall Time:
8.3 ns
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
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Teledyne e2v HiRel Electronics - TDG650E602TSPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 11 to 60 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Battery management, Traction Drive, dc-dc Converte...
Dimensions:
9 x 7.6 x 0.54 mm
more info
WI62195T Image
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Wise-integration - WI62195T

GaN Power Transistor from Wise-integration
650 V Half-Bridge GaN-on-silicon Power IC

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
9 A
Total Charge:
1.9 nC
Input Capacitance:
53.5 pF
Output Capacitance:
13.3 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
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Ancora Semiconductor - FET-E6007PB021

GaN Power Transistor from Ancora Semiconductor
650 V, 65 milli-ohm, GaN Transistor

Product Specs

Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
65 milli-ohm
Total Charge:
5.56 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Dimensions:
8 x 8 mm
more info
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Solid State Devices - SGF15D100JDB

GaN Power Transistor from Solid State Devices
1000 V, 140 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
-27 to -8 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
140 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
30 nC
Input Capacitance:
135 pF
Output Capacitance:
44 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGC8FN70R110A

GaN Power Transistor from Xindao Electronic Technology
700 V, 20 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Automotive, Commercial, Industrial
Gate Threshold Voltage:
3 to 4.8 V
Drain Source Voltage:
700 V
Drain Source Resistance:
110 to 230 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
35 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8*8-8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
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GaNPower International - GPI65060DFC

GaN Power Transistor from GaNPower International
650 V, 25 to 30 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 to 30 milli-ohm
Continous Drain Current:
60 A
Total Charge:
16.1 nC
Input Capacitance:
420 pF
Output Capacitance:
143 pF
Turn-on Delay Time:
9 ns
Turn-off Delay Time:
26 ns
Rise Time:
17 ns
Fall Time:
17 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8x8
Applications:
Switching Power, Server and Telecom Power, EV OBC ...
more info
IGI60L5050B1M Image
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Infineon Technologies - IGI60L5050B1M

GaN Power Transistor from Infineon Technologies
600 V GaN Half-Bridge Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
500 to 1060 milli-ohm
Continous Drain Current:
2.3 to 3 A
Pulsed Drain Current:
4 to 6.7 A
Total Charge:
0.52 nC
Input Capacitance:
39 pF
Output Capacitance:
6.3 pF
Turn-on Delay Time:
90 to 110 ns
Turn-off Delay Time:
90 to 110 ns
Rise Time:
70 to 170 ns
Fall Time:
35 to 90 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TFLGA-27-2
Applications:
Low power motor drives, Low power SMPS
Dimensions:
6 x 8 mm
more info
GANE3R9-150QBAZ Image
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Nexperia - GANE3R9-150QBAZ

GaN Power Transistor from Nexperia
150 V Enhancement Mode GaN Power Transistor for Charging Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
3.9 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
260 A
Total Charge:
20 nC
Input Capacitance:
2200 pF
Output Capacitance:
900 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
VQFN7
Applications:
High power density and high efficiency power conve...
Dimensions:
4 x 6 mm
more info
EPC29215_55 Image
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Efficient Power Conversion - EPC29215_55

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
200 V
Drain Source Resistance:
8 milli-ohm
Continous Drain Current:
32 A
Pulsed Drain Current:
162 A
Total Charge:
17.7 nC
Input Capacitance:
1790 pF
Output Capacitance:
585 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC Converters, BLDC Motor Drives, Sync Rectific...
Dimensions:
4.6 x 1.6 mm
more info
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Tagore Technology - TP44200SGTRPBF

GaN Power Transistor from Tagore Technology
650 V, 180 to 440 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Total Charge:
1.5 nC
Input Capacitance:
55 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
12 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
5.7 x 0.8 mm
more info
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EPC Space - EPC7002CDASH

GaN Power Transistor from EPC Space
40 V, 10 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
9 to 15 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
62 A
Total Charge:
3 nC
Input Capacitance:
312 pF
Output Capacitance:
270 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.7 mm
more info
SGT65R65AL Image
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STMicroelectronics - SGT65R65AL

GaN Power Transistor from STMicroelectronics
650 V Enhancement Mode GaN Power Transistor for UPS Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
49 milli-ohm
Continous Drain Current:
25 A
Pulsed Drain Current:
70 A
Total Charge:
5.4 nC
Input Capacitance:
286 pF
Output Capacitance:
85 pF
Turn-on Delay Time:
5.2 ns
Turn-off Delay Time:
10 ns
Rise Time:
10.9 ns
Fall Time:
5.3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
AC-DC converters, AC-DC PSU for server and telecom...
Dimensions:
5 x 6 mm
more info
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