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GaN Power Transistors - Page 3

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 3 of 34
NV6523 Image
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Navitas Semiconductor - NV6523

GaN Power Transistor from Navitas Semiconductor
-7 to 650 V, 33 to 53 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
32 to 77 milii-ohm
Continous Drain Current:
33 to 53 A
Pulsed Drain Current:
48 to 106 A
Output Capacitance:
91 pF
Turn-on Delay Time:
25 to 37 ns
Turn-off Delay Time:
7 to 14 ns
Rise Time:
8 ns
Fall Time:
8 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLT-16L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
TP65H030G4PRS Image
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Renesas - TP65H030G4PRS

GaN Power Transistor from Renesas
650 V D-Mode GaN Field Effect Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial, Automotive
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
30 to 62 milli-ohm
Continous Drain Current:
35 to 55.7 A
Pulsed Drain Current:
230 A
Total Charge:
24.5 nC
Input Capacitance:
1500 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
26.4 ns
Turn-off Delay Time:
63.6 ns
Rise Time:
6.4 ns
Fall Time:
5.2 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLT
Applications:
AI datacenter and telecom power supplies, E-mobili...
more info
GNP2070TD-ZTR Image
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ROHM Semiconductor - GNP2070TD-ZTR

GaN Power Transistor from ROHM Semiconductor
650 V Enhancement Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
70 to 161 milli-ohm
Continous Drain Current:
13 to 27 A
Pulsed Drain Current:
27 to 53 A
Total Charge:
5.2 nC
Input Capacitance:
200 pF
Output Capacitance:
50 pF
Turn-on Delay Time:
5.9 ns
Turn-off Delay Time:
8 ns
Rise Time:
6.9 ns
Fall Time:
8.7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-8N
Applications:
High Switching Frequency Converter, High Density C...
Dimensions:
11.68 x 9.9 x 2.4 mm ( W x D x H)
more info
TDG650E60BEPF Image
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Teledyne e2v HiRel Electronics - TDG650E60BEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V E-mode GaN transistor for Power Conversion Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
High efficiency power conversion, High density pow...
Dimensions:
11.02 x 9.02 mm
more info
TSG65N195CE RVG Image
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Taiwan Semiconductor - TSG65N195CE RVG

GaN Power Transistor from Taiwan Semiconductor
650 V Enhancement Mode GaN Power Transistor for Fast Charging Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
19 A
Total Charge:
2.2 nC
Input Capacitance:
70 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
5 nS
Turn-off Delay Time:
8 nS
Rise Time:
5 nS
Fall Time:
10 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN56
Applications:
Power Adapters, LED Lighting Drivers, Fast Battery...
Dimensions:
8 x 8 mm
more info
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Central Semiconductor - CPG003-CDFG6511N

GaN Power Transistor from Central Semiconductor
650 V, 11.5 A, GaN Transistor

Product Specs

Industry:
Military, Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Output Capacitance:
60 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Low gate charge, Low output charge and ultra high ...
more info
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MGT Technology - GPT65Z1SHD

GaN Power Transistor from MGT Technology
650 V, 16000 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
-4.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
16000 milli-ohm
Continous Drain Current:
0.35 A
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC/DC LED Power Supply, LED AC Lamps, LED DC Lamps
more info
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VisIC Technologies - V22TC065S1X03

GaN Power Transistor from VisIC Technologies
650 V, 22 milli-ohm, GaN Transistor

Product Specs

Industry:
Automotive, Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
22 milli-ohm
Continous Drain Current:
65 A
Total Charge:
41 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD
Applications:
Solar Inverter, AC-DC Power Supply, AC motor, Batt...
Dimensions:
15 x 18 x 3 mm
more info
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Cambridge GaN Devices - CGD65B200S2

GaN Power Transistor from Cambridge GaN Devices
650 V, 200 to 530 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
200 to 530 milli-ohm
Continous Drain Current:
8.5 A
Total Charge:
1.4 nC
Output Capacitance:
14 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
13 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
5 x 6 mm
more info
WI71060ATR Image
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Wise-integration - WI71060ATR

GaN Power Transistor from Wise-integration
700 V E-Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1 to 1.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
55 to 140 milli-ohm
Continous Drain Current:
30 A
Total Charge:
7 nC
Input Capacitance:
216 pF
Output Capacitance:
77 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Package:
DFN 8x8
Applications:
High density power conversion, AC-DC, DC-DC, DC-AC...
Dimensions:
8 x 8 mm
more info
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Ancora Semiconductor - FET-E6007PB030

GaN Power Transistor from Ancora Semiconductor
650 V, 70 milli-ohm, GaN Transistor

Product Specs

Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
70 milli-ohm
Total Charge:
5.41 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL
Dimensions:
11.7 x 9.9 mm
more info
SGF15D100JUB Image
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Solid State Devices - SGF15D100JUB

GaN Power Transistor from Solid State Devices
1000 V Depletion Mode GaN Power Transistor for Aerospace Applications

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
-27 to -8 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
140 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
30 nC
Input Capacitance:
135 pF
Output Capacitance:
44 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
Dimensions:
1.760 x 0.420 inches
more info
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Xindao Electronic Technology - PDG7117

GaN Power Transistor from Xindao Electronic Technology
650 V, 8 A, GaN Transistor

Product Specs

Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
250 milli-ohm
Continous Drain Current:
8 A
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060-8L
more info
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GaNPower International - GPI4TIC8DFV

GaN Power Transistor from GaNPower International
900 V, 170 to 190 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
900 V
Drain Source Resistance:
170 to 190 milli-ohm
Continous Drain Current:
8 A
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
16 ns
Rise Time:
8 ns
Fall Time:
15 ns
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN6x8
Applications:
Switching Power, Power adapters, Power Delivery Ch...
more info
IGI60L1414B1M Image
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Infineon Technologies - IGI60L1414B1M

GaN Power Transistor from Infineon Technologies
600 V, 4.3 to 6 A, GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 300 milli-ohm
Continous Drain Current:
4.3 to 6 A
Pulsed Drain Current:
14 to 23 A
Total Charge:
1.8 nC
Input Capacitance:
133 pF
Output Capacitance:
22 pF
Turn-on Delay Time:
90 to 110 ns
Turn-off Delay Time:
90 to 110 ns
Rise Time:
70 to 170 ns
Fall Time:
35 to 90 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TFLGA-27-2
Applications:
Low power motor drives, Low power SMPS
Dimensions:
6 x 8 mm
more info
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