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GaN Power Transistors - Page 5

509 GaN Power Transistors from 22 manufacturers meet your specification.
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509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 5 of 34
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Ancora Semiconductor - FET-E6025PB010

GaN Power Transistor from Ancora Semiconductor
650 V, 25 milli-ohm, GaN Transistor

Product Specs

Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
25 milli-ohm
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL
Dimensions:
11.7 x 9.9 mm
more info
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Solid State Devices - SGF46E70M

GaN Power Transistor from Solid State Devices
700 V, 30 to 72 milli-ohm, 46 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
30 to 72 milli-ohm
Continous Drain Current:
46 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Xindao Electronic Technology - PGC8FN70R160A

GaN Power Transistor from Xindao Electronic Technology
700 V, 16 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Automotive, Commercial, Industrial
Gate Threshold Voltage:
1 to 3 V
Drain Source Voltage:
700 V
Drain Source Resistance:
160 to 340 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
21 A
Total Charge:
7.8 nC
Input Capacitance:
378 pF
Output Capacitance:
23 pF
Turn-on Delay Time:
2.5 ns
Turn-off Delay Time:
9.7 ns
Rise Time:
7 ns
Fall Time:
28 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8*8-8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
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GaNPower International - GPIRGIC15DFV

GaN Power Transistor from GaNPower International
900 V, 85 to 170 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
900 V
Drain Source Resistance:
85 to 170 milli-ohm
Continous Drain Current:
15 A
Turn-on Delay Time:
20 ns
Turn-off Delay Time:
27 ns
Rise Time:
18 ns
Fall Time:
32 ns
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8x8
Applications:
Switching Power, Power adapters, Power Delivery Ch...
more info
IGI60L2727B1M Image
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Infineon Technologies - IGI60L2727B1M

GaN Power Transistor from Infineon Technologies
600 V GaN Half-Bridge Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
270 to 490 milli-ohm
Continous Drain Current:
3.7 to 4.8 A
Pulsed Drain Current:
4 to 9 A
Total Charge:
1.2 nC
Input Capacitance:
83.5 pF
Output Capacitance:
12.1 pF
Turn-on Delay Time:
90 to 110 ns
Turn-off Delay Time:
90 to 110 ns
Rise Time:
70 to 170 ns
Fall Time:
35 to 90 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TFLGA-27-2
Applications:
Low power motor drives, Low power SMPS
Dimensions:
6 x 8 mm
more info
GANE240-700BBA Image
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Nexperia - GANE240-700BBA

GaN Power Transistor from Nexperia
700 V E-Mode GaN Field Effect Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
165 to 360 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
10 to 18 A
Total Charge:
2 nC
Input Capacitance:
79 pF
Output Capacitance:
25 pF
Turn-on Delay Time:
2 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO252
Applications:
High power density and high efficiency power conve...
more info
EPC2057 Image
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Efficient Power Conversion - EPC2057

GaN Power Transistor from Efficient Power Conversion
50 V Enhancement Mode GaN FET

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
50 V
Drain Source Resistance:
6 to 8.5 milli-ohm
Continous Drain Current:
9.6 A
Pulsed Drain Current:
66 A
Total Charge:
3.5 nC
Input Capacitance:
444 pF
Output Capacitance:
218 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC Converters, Isolated DC-DC Converters, USB-C...
Dimensions:
1.5 x 1.2 mm
more info
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Tagore Technology - TP44200NMTRPBF

GaN Power Transistor from Tagore Technology
650 V, 180 to 440 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Output Capacitance:
18 pF
Turn-on Delay Time:
17 ns
Turn-off Delay Time:
23 ns
Rise Time:
11 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
As switching FETs in singles, or in pairs as half-...
Dimensions:
5.7 x 0.85 mm
more info
FBS-GAM02-P-R50 Image
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EPC Space - FBS-GAM02-P-R50

GaN Power Transistor from EPC Space
Rad-Hard Multifunctional Power Module

Product Specs

Configuration:
Single
Industry:
Space, Industrial, Commercial
Drain Source Voltage:
0.83 to 1.15 V
Drain Source Resistance:
9 to 28 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
15 A
Output Capacitance:
500 to 1150 pF
Turn-on Delay Time:
45 to 150 ns
Turn-off Delay Time:
45 to 190 ns
Rise Time:
6.5 to 28 ns
Fall Time:
5 to 25 ns
Temperature operating range:
-40 to 130 Degree C
Package Type:
Surface Mount
Package:
SMT
Applications:
Power Switches/Actuators, Single and Multi-Phase M...
more info
SGT080R70ILB Image
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STMicroelectronics - SGT080R70ILB

GaN Power Transistor from STMicroelectronics
700 V E-Mode PowerGaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
60 to 135 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
58 A
Total Charge:
6.2 nC
Input Capacitance:
225 pF
Output Capacitance:
70 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
5 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
PowerFLAT
Applications:
Adapters for tablets, Notebook and AIO, USB type-C...
more info
INV100FQ030C Image
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Innoscience - INV100FQ030C

GaN Power Transistor from Innoscience
100 V, 100 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.5 to 3.2 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
320 A
Total Charge:
66 nC
Input Capacitance:
2770 pF
Output Capacitance:
620 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Package:
FCQFN 4X6
Applications:
BMS battery protection, High side load switch in b...
Dimensions:
4 x 6 mm
more info
NV6512C Image
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Navitas Semiconductor - NV6512C

GaN Power Transistor from Navitas Semiconductor
-7 to 650 V, 26 to 41 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
40 to 94 milli-ohm
Continous Drain Current:
26 to 41 A
Pulsed Drain Current:
38 to 83 A
Output Capacitance:
74 pF
Turn-on Delay Time:
24 to 35 ns
Turn-off Delay Time:
7 to 13 ns
Rise Time:
8 ns
Fall Time:
7 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
TP65H030G4PWS Image
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Renesas - TP65H030G4PWS

GaN Power Transistor from Renesas
650 V D-Mode GaN Field Effect Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial, Automotive
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
30 to 62 milli-ohm
Continous Drain Current:
35 to 55.7 A
Pulsed Drain Current:
230 A
Total Charge:
24.5 nC
Input Capacitance:
1500 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
40.8 ns
Turn-off Delay Time:
89.2 ns
Rise Time:
6.8 ns
Fall Time:
8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247 3L
Applications:
AI datacenter and telecom power supplies, E-mobili...
more info
GNE1008TB Image
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ROHM Semiconductor - GNE1008TB

GaN Power Transistor from ROHM Semiconductor
150 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
12.8 milli-ohm
Continous Drain Current:
14.2 A
Pulsed Drain Current:
30 A
Total Charge:
7 nC
Input Capacitance:
975 pF
Output Capacitance:
320 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060
Applications:
Half Bridge topologies, AC/DC Converters (secondar...
Dimensions:
5 x 6 mm
more info
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Teledyne e2v HiRel Electronics - TDG650E601TSPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 25 to 65 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 to 65 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Battery management, Traction Drive, dc-dc Converte...
Dimensions:
9 x 7.6 x 0.54 mm
more info
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