GaN Power Transistors - Page 4

509 GaN Power Transistors from 22 manufacturers meet your specification.
509 GaN Power Transistors from 22 Manufacturers
509 Products from 22 Manufacturers
Page 4 of 34
40 V Bi-Directional GaN Field Effect Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
0.9 to 1.6 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
500 A
Total Charge:
60 nC
Input Capacitance:
3500 pF
Output Capacitance:
1600 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
VQFN16
Applications:
High-side load switch, OVP protection in smart pho...
Dimensions:
4 x 6 mm
more info
650 V, 360 to 880 milli-ohm GaN Transistor

Product Specs

Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
60 V Rad-Hard eGaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial, Military, Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 72 V
Drain Source Resistance:
340 to 580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
18 to 22 pF
Output Capacitance:
17 to 30 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Commercial Satellite EPS & Avionics, Deep Space Pr...
Dimensions:
3.25 x 2.7 mm
more info
700 V E-Mode PowerGaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
80 to 180 milli-ohm
Continous Drain Current:
21.7 A
Pulsed Drain Current:
43.5 A
Total Charge:
4.8 nC
Input Capacitance:
179 pF
Output Capacitance:
66.2 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
PowerFLAT
Applications:
Adapters for tablets, Notebook and AIO, USB type-C...
more info
30 V, 80 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1.0 to 2.4 V
Drain Source Voltage:
30 V
Drain Source Resistance:
0.9 to 1.2 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
400 A
Total Charge:
44 nC
Input Capacitance:
3000 pF
Output Capacitance:
1300 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Package:
FCQFN 6X4
Applications:
High side load switch, OVP protection, Switch circ...
Dimensions:
6 x 4 mm
more info
-7 to 650 V, 33 to 53 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
32 to 77 milii-ohm
Continous Drain Current:
33 to 53 A
Pulsed Drain Current:
48 to 106 A
Output Capacitance:
91 pF
Turn-on Delay Time:
25 to 37 ns
Turn-off Delay Time:
7 to 14 ns
Rise Time:
8 ns
Fall Time:
8 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
650 V D-Mode GaN Field Effect Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial, Automotive
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
30 to 62 milli-ohm
Continous Drain Current:
35 to 55.7 A
Pulsed Drain Current:
230 A
Total Charge:
24.5 nC
Input Capacitance:
1500 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
26.4 ns
Turn-off Delay Time:
63.6 ns
Rise Time:
6.4 ns
Fall Time:
8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL
Applications:
AI datacenter and telecom power supplies, E-mobili...
more info
30 V Low-EMI GaN Power Stage IC

Product Specs

Industry:
Industrial, Commercial
Drain Source Voltage:
650 V
Drain Source Resistance:
150 to 360 milli-ohm
Continous Drain Current:
5.4 to 39.7 A
Output Capacitance:
24.5 pF
Turn-on Delay Time:
7 to 21 ns
Turn-off Delay Time:
10 to 28 ns
Rise Time:
5 ns
Fall Time:
2.1 ns
Temperature operating range:
-40 to 105 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
VQFN046V8080
Applications:
Industrial Equipment, Power Supplies with High Pow...
Dimensions:
8.0 x 8.0 x 1.0 mm
more info
650 V, 11 to 60 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
9 x 7.6 x 0.54 mm
more info
650 V Enhancement Mode GaN Power Transistor for Wireless Power Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
19 A
Total Charge:
2.2 nC
Input Capacitance:
70 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
5 nS
Turn-off Delay Time:
8 nS
Rise Time:
5 nS
Fall Time:
10 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN56
Applications:
Power Adapters, LED Lighting Drivers, Fast Battery...
Dimensions:
5 x 6 mm
more info
100 V, 60 A, GaN Transistor

Product Specs

Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 5.5 milli-ohm
Continous Drain Current:
60 A
Total Charge:
9.2 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CSP3.5X2
Applications:
EV charging stations, Microinverters, and highly e...
more info
650 V, 245 to 500 milli-ohm, GaN Transistor

Product Specs

Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
245 to 500 milli-ohm
Continous Drain Current:
6 to 9 A
Pulsed Drain Current:
31 A
Total Charge:
22 nC
Input Capacitance:
500 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
20 ns
Turn-off Delay Time:
80 ns
Rise Time:
7 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Battery Chargers, Power Adapters, LED Lighting, AC...
Dimensions:
8 x 8 mm
more info
650 V Direct Drive D-Mode Power Switch for Power Supply Applications

Product Specs

Industry:
Automotive, Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
8 milli-ohm
Continous Drain Current:
200 A
Pulsed Drain Current:
380 A
Total Charge:
110 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD
Applications:
Solar Inverter, AC-DC Power Supply, AC motor, Batt...
Dimensions:
21 x 23 x 3 mm
more info
650 V, 130 to 350 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
1.9 nC
Output Capacitance:
24 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
8 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
5 x 6 mm
more info
700 V E-Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.95 to 1.5 V
Drain Source Voltage:
700 V
Drain Source Resistance:
96 to 290 milli-ohm
Continous Drain Current:
17 A
Total Charge:
4.8 nC
Input Capacitance:
120 pF
Output Capacitance:
44 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Package:
DFN 8x8
Applications:
High density power conversion, AC-DC, DC-DC, DC-AC...
Dimensions:
8 x 8 mm
more info

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