MOSFETs

19,149 MOSFETs from 69 manufacturers listed on everything PE

MOSFET or Metal-Oxide-Semiconductor Field-Effect Transistor is a voltage controlled semiconductor device that can be used as a switch or an amplifier, depending on its configuration and application. MOSFETs from the leading manufacturers are listed on everything PE. Narrow down on products based on type, configuration, polarity, number of outputs, package type, etc. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

19,149 MOSFETs from 69 Manufacturers
19,149 Products from 69 Manufacturers
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40 V Automotive Grade N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 to 420 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.45 to 0.85 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
187 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerFLAT
Industry:
Automotive, Industrial, Commercial
Applications:
Power distribution
more info
1200 V, 100 to 128 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 to 128 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
16.8 to 35 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
535 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227
Industry:
Industrial, Commercial
Applications:
EV chargers, Server and telecom PSU, UPS, Solar In...
more info
2300 V, 1330 A, 0.02 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1330 A
Drain Source Breakdown Voltage:
2300 V
Drain Source Resistance:
0.95 to 2.88 milli-ohm
Gate Source Voltage:
-7 to 20 V
Power Dissipation:
0.02 W
Industry:
Industrial, Commercial
more info
3300 V, 95 A, 580 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
95 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
20 to 65 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
580 W
Temperature operating range:
-40 to 175 Degree C
Industry:
Industrial, Commercial
Applications:
Solid State Transformers, Energy Storage Systems, ...
more info
-60 V, -14.5 to 14.5 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-14.5 to 14.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
68 to 97 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.0 to 21 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSOP8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
80 V, 168 to 238 A, 150 to 300 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
168 to 238 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2 to 4.2 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
150 to 300 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN
Industry:
Industrial, Commercial
Applications:
DC-DC Brick Module, Synchronous Rectification
more info
60 V, 1 ohm, 1.1 W, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1 ohm
Gate Source Voltage:
±15 V
Power Dissipation:
1.1 W
Temperature operating range:
-55 to 125 Degree C
Package:
SOT-89
Industry:
Industrial, Commercial
Applications:
Ignition Modules, Normally-On Switches, Solid Stat...
more info
1200 V 3-Phase SiC MOSFET for Inverter Applications

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
550 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.53 milli-ohm
Temperature operating range:
-40 to 125 Degree C
Industry:
Commercial, Industrial
Applications:
Inverter Applications
more info
60 V, 322 to 455 A, 4.7 to 365.8 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
322 to 455 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
0.5 to 0.85 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
4.7 to 365.8 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerDI8080-5
Industry:
Automotive, Industrial, Commercial
Applications:
Engine management systems, Body control electronic...
more info
1200 V, 172 A, MOSFET

Product Specs

Technology:
SiC
Continous Drain Current:
172 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
7 milli-ohm
Package:
QDPAK
Industry:
Industrial, Commercial
Applications:
Power supplies for data centers (AC-DC, DC-DC), Ph...
more info
AEC-Q101 Qualified N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 to 100 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.8 to 8.1 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
51 to 153 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN56U
Industry:
Automotive, Industrial, Commercial
Applications:
Solenoid and motor drivers, DC-DC converters
more info
1200 V SiC MOSFET for Automotive Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
980 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.9 milli-ohm
Gate Source Voltage:
15 V
Temperature operating range:
-40 to 175 degree C
Industry:
Automotive
Applications:
main drive train in xEVs, e-trucks, e-buses, tract...
more info
280 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 A
Drain Source Breakdown Voltage:
280 V
Drain Source Resistance:
35 to 45 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
430 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247AD
Industry:
Commercial, Industrial
more info
90 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
90 V
Drain Source Resistance:
22 to 30 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
56 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
-12 V, P-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.8 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
32 to 75 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
WMini8-F1
Industry:
Industrial, Commercial
more info

What is a MOSFET?

A MOSFET is a voltage-controlled power semiconductor device that regulates current flow through an electric field established by an insulated gate structure. Conduction occurs when the applied gate–source voltage induces a conductive channel between the drain and source terminals, allowing precise control of current with minimal steady-state gate drive power.

MOSFETs are fundamental components in power conversion, motor control, and switching applications due to their fast switching capability and scalable current handling. Device performance is determined by channel structure, breakdown capability, and on-state resistance, all of which directly influence efficiency, switching losses, and thermal behavior in power electronic systems.

Key Specifications

  • Type: Defines the functional classification of the MOSFET, indicating its intended operating mode and switching characteristics.
  • Technology: Identifies the semiconductor process and structural implementation, which affects switching speed, efficiency, and robustness.
  • Polarity: Indicates whether the device is n-channel or p-channel, determining current flow direction and gate drive requirements.
  • Number of Channels: Specifies how many conductive channels are integrated within the device, influencing current capability and integration level.
  • Continuous Drain Current: Represents the maximum drain current the device can conduct continuously under defined thermal conditions.
  • Drain Source Breakdown Voltage: Defines the maximum voltage the MOSFET can block between drain and source when in the off-state.
  • Drain Source Resistance: Represents the on-state resistance of the device, directly impacting conduction losses and heat generation.
  • Gate Source Voltage: Specifies the allowable voltage applied between the gate and source terminals, which is critical for safe operation and gate drive design.

The Largest Database of MOSFET

everything PE has listed MOSFETs from the leading manufacturers and made them searchable by specification. You can enter the key parameters and the search tool will scan catalogs from the leading manufacturers to identify products that meet your spec. Once you find a MOSFET that meets your requirement, you can view product information, download datasheets or request quotations. Quotation requests will be routed to the manufacturer of the product who will get back to you directly. The quotation will also be routed to distributors of the product in your region.

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